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BTB24-700B Folha de dados(PDF) 3 Page - STMicroelectronics |
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BTB24-700B Folha de dados(HTML) 3 Page - STMicroelectronics |
3 / 4 page 0 25 50 75 100 125 0 5 10 15 20 25 30 IT(rms)(A) Tcase(°C) α = 180° Fig. 3: RMS on-state current versus case temperature. 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 0.01 0.10 1.00 K=[Zth/Rth] Zth(j-c) Zth(j-a) tp(s) Fig. 4: Relative variation of thermal impedance versus pulse duration. -40 -20 0 20 40 60 80 100 120 140 0.0 0.5 1.0 1.5 2.0 2.5 IGT,IH[Tj] / IGT,IH[Tj=25°C] IGT IH Tj(°C) Fig. 5: Relative variation of gate trigger current and holding current versus junction temperature (typical values). 1 10 100 1000 0 20 40 60 80 100 120 140 160 180 200 220 ITSM(A) Tj initial=25°C F=50Hz Number of cycles Fig. 6: Non Repetitive surge peak on-state current versus number of cycles. 12 5 10 100 200 500 1000 ITSM(A),I²t(A²s) Tj initial=25°C ITSM I²t tp(ms) Fig. 7: Non repetitive surge peak on-state current for a sinusoidal pulse with width : t ≤ 10ms, and corresponding value of I2t. 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 1 10 100 300 ITM(A) Tj=25°C Tj max.: Vto=0.95V Rt=19m Ω Tj=Tj max. VTM(V) Fig. 8: On-state characteristics (maximum values). BTB24 B 3/4 |
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Descrição semelhante - BTB24-700B |
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