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PZT4403 Folha de dados(PDF) 3 Page - NXP Semiconductors |
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PZT4403 Folha de dados(HTML) 3 Page - NXP Semiconductors |
3 / 7 page NXP Semiconductors Product specification PNP switching transistor PZT4403 THERMAL CHARACTERISTICS Note 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated Handbook”. CHARACTERISTICS Tj =25 °C unless otherwise specified. Note 1. Pulse test: tp ≤ 300 µs; δ≤ 0.02. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 106 K/W Rth j-s thermal resistance from junction to soldering point 25 K/W SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = −40 V −−50 nA IEBO emitter cut-off current IC = 0; VEB = −5V −−50 nA hFE DC current gain VCE = −1 V; see Fig.2 IC = −0.1 mA 30 − IC = −1mA 60 − IC = −10 mA 100 − IC = −150 mA; note 1 100 300 VCE = −2 V; IC = −500 mA; note 1 20 − VCEsat collector-emitter saturation voltage IC = −150 mA; IB = −15 mA; note 1 −−400 mV IC = −500 mA; IB = −50 mA; note 1 −−750 mV VBEsat base-emitter saturation voltage IC = −150 mA; IB = −15 mA; note 1 −−950 mV IC = −500 mA; IB = −50 mA; note 1 −−1300 mV Cc collector capacitance IE =ie = 0; VCB = −5V; f=1MHz − 8.5 pF Ce emitter capacitance IC =ic = 0; VEB = −500 mV; f = 1 MHz − 35 pF fT transition frequency IC = −20 mA; VCE = −10 V; f = 100 MHz 200 − MHz Switching times (between 10% and 90% levels); see Fig.3 ton turn-on time ICon = −150 mA; IBon = −15 mA; IBoff = 15 mA; VBB = 3.5 V; VCC = −29.5 V − 40 ns td delay time − 15 ns tr rise time − 30 ns toff turn-off time − 350 ns ts storage time − 300 ns tf fall time − 50 ns Rev. 02 - 17 January 2008 3 of 7 |
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