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PZT4403 Folha de dados(PDF) 3 Page - NXP Semiconductors

Nome de Peças PZT4403
Descrição Electrónicos  PNP switching transistor
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Fabricante Electrônico  NXP [NXP Semiconductors]
Página de início  http://www.nxp.com
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PZT4403 Folha de dados(HTML) 3 Page - NXP Semiconductors

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NXP Semiconductors
Product specification
PNP switching transistor
PZT4403
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see
“Thermal considerations for SOT223 in the General Part of associated
Handbook”.
CHARACTERISTICS
Tj =25 °C unless otherwise specified.
Note
1. Pulse test: tp ≤ 300 µs; δ≤ 0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
106
K/W
Rth j-s
thermal resistance from junction to soldering point
25
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = −40 V
−−50
nA
IEBO
emitter cut-off current
IC = 0; VEB = −5V
−−50
nA
hFE
DC current gain
VCE = −1 V; see Fig.2
IC = −0.1 mA
30
IC = −1mA
60
IC = −10 mA
100
IC = −150 mA; note 1
100
300
VCE = −2 V; IC = −500 mA; note 1
20
VCEsat
collector-emitter saturation
voltage
IC = −150 mA; IB = −15 mA; note 1
−−400
mV
IC = −500 mA; IB = −50 mA; note 1
−−750
mV
VBEsat
base-emitter saturation voltage
IC = −150 mA; IB = −15 mA; note 1
−−950
mV
IC = −500 mA; IB = −50 mA; note 1
−−1300
mV
Cc
collector capacitance
IE =ie = 0; VCB = −5V; f=1MHz
8.5
pF
Ce
emitter capacitance
IC =ic = 0; VEB = −500 mV; f = 1 MHz −
35
pF
fT
transition frequency
IC = −20 mA; VCE = −10 V;
f = 100 MHz
200
MHz
Switching times (between 10% and 90% levels); see Fig.3
ton
turn-on time
ICon = −150 mA; IBon = −15 mA;
IBoff = 15 mA; VBB = 3.5 V;
VCC = −29.5 V
40
ns
td
delay time
15
ns
tr
rise time
30
ns
toff
turn-off time
350
ns
ts
storage time
300
ns
tf
fall time
50
ns
Rev. 02 - 17 January 2008
3 of 7


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