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BTA2008-600D Folha de dados(PDF) 6 Page - NXP Semiconductors

Nome de Peças BTA2008-600D
Descrição Electrónicos  0.8 A Three-quadrant triacs high commutation
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BTA2008-600D Folha de dados(HTML) 6 Page - NXP Semiconductors

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BTA2008_SER_D_E_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 18 January 2008
6 of 12
NXP Semiconductors
BTA2008 series D and E
0.8 A Three-quadrant triacs high commutation
6.
Static characteristics
Table 5.
Static characteristics
Tj =25 °C unless otherwise specified.
Symbol Parameter
Conditions
BTA2008-600D
BTA2008-800D
BTA2008-600E
BTA2008-800E
Unit
Min
Typ
Max
Min
Typ
Max
IGT
gate trigger current VD =12V; IT = 0.1 A; see Figure 8
T2+ G+
0.25
-
5
0.5
-
10
mA
T2+ G
0.25
-
5
0.5
-
10
mA
T2
− G−
0.25
-
5
0.5
-
10
mA
IL
latching current
VD =12V; IGT = 0.1 A;
see Figure 10
T2+ G+
-
-
10
-
-
12
mA
T2+ G
-
-
20
-
-
20
mA
T2
− G−
-
-
10
-
-
12
mA
IH
holding current
VD =12V; IGT = 0.1 A;
see Figure 11
-
-
10
-
-
12
mA
VT
on-state voltage
IT = 0.85 A; see Figure 9
-
1.35
1.6
-
1.35
1.6
V
VGT
gate trigger voltage VD =12V; IT = 0.1 A; see Figure 7
-
0.9
2
-
0.9
2
V
VD = 400 V; IT = 0.1 A; Tj = 125 °C
0.2
0.3
-
0.2
0.3
-
V
ID
off-state current
VD =VDRM(max); Tj = 125 °C
-
0.1
0.5
-
0.1
0.5
mA


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