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BTA2008-800D Folha de dados(PDF) 4 Page - NXP Semiconductors |
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BTA2008-800D Folha de dados(HTML) 4 Page - NXP Semiconductors |
4 / 12 page BTA2008_SER_D_E_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 18 January 2008 4 of 12 NXP Semiconductors BTA2008 series D and E 0.8 A Three-quadrant triacs high commutation tp ≤ 20 ms (1) dIT/dt limit Fig 3. Non-repetitive peak on-state current as a function of pulse duration; maximum values f = 50 Hz Tlead =70 °C Fig 4. RMS on-state current as a function of surge duration; maximum values Fig 5. RMS on-state current as a function of lead temperature; maximum values 003aac119 10 10 2 10 3 10 -5 10 -4 10 -3 10 -2 10 -1 tp (s) ITSM (A) ITSM t IT Tj(init) = 25 °C max tp (1) 003aac117 0 2 4 6 8 10 12 10 -2 10 -1 1 10 surge duration (s) I T(RMS) (A) 003aac115 0 0.2 0.4 0.6 0.8 1 -50 0 50 100 150 Tlead (°C) IT(RMS) (A) |
Nº de peça semelhante - BTA2008-800D |
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Descrição semelhante - BTA2008-800D |
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