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L6353 Folha de dados(PDF) 7 Page - STMicroelectronics

Nome de Peças L6353
Descrição Electrónicos  SMART DRIVER FOR POWER MOS & IGBT
Download  11 Pages
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

L6353 Folha de dados(HTML) 7 Page - STMicroelectronics

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INPUT INTERFACE
To drive the external power device three different
possibilities are allowed:
The Logic Level Mode, either direct or inverted,
and the Pulse Transformer Mode
Using the Logic Level Mode (direct) an high level
(referred to COM), at the INPUT pin will start the
Turn on Procedure (i.e. firing an N channel exter-
nal device). A low level (referred to COM) will in-
stead close the OUT2 pin to VSS.
The functioning is reversed in the inverted mode.
To select the direct mode the SELECT pin must
be connected via a capacitor to COM. The in-
verted mode is chosen by connecting the SE-
LECT pin to COM.
In logic Level Mode pulses lasting less than tinh
(200ns typ.) are filtered out.
In the Pulse Transformer Mode the SELECT pin
will be the reference pin for the signal applied to
the INPUTpin. The positive pulse will start the
TURN ON PROCEDURE, while the negative
pulse will close OUT2 to VSS. The duration of this
pulses (tw, see fig.2) must be again tw >tinh.
TURN-ON PROCEDURE
The firing of the external power device is per-
formed in three steps in order to avoid the most
common problems that can arise.
In each of these steps there are a number of pa-
rameters that can be easily externally presetted to
the requested values.
First Step
Parameter: tDELAY
In order to avoid cross-conduction between the
external power device in half bridge arrangement
the driver output is activated after an externally
programmable delay time (tDELAY, see fig. 3) after
the input signal. To set the tDELAYinterval an R-C
network has to be connected between the DE-
LAY, VREF and COM pins (see fig.4) giving:
tDELAY (
µsec) = REXT (KΩ). CEXT(nF)+ ton
To minimize this interval only a resistor has to be
connected between the DELAY and the VREF lim-
iting thus the duration to the internal propagation
delay ton.
Second step
Parameters: tMON_DELAY,VCL
To protect the driven device from latch-up at turn-
on (IGBT) after the tDELAY time interval a second
externally programmable time interval
tMON_DE-
LAY (presettable using the same technique used
to set the tDELAY interval, see fig.4)
tMON-DELAY (
µsec) = REXT (KΩ). CEXT(nF)
during the tMON_DELAY the voltage on the VOUT1)
is limited to the VCL level. To program this value
an appropriate voltage drop has to be imposed,
by mean of a resistive voltage divider, at the
CLAMP_PROG pin according to the following for-
mula:
100nF
LOGIC
VSS(**)
OUT2
OUT1
VPOS
D94IN116B
VREF
MON DELAY
CLAMP_PROG
COM
VH.V.
DFW
LOAD
1.2
5.6
VG
ON_SENSE
VCE
INPUT
Vin
VREF
12K
2.2K
100nF
(*)
VREF
1nF
47K
ON_LEV_PROG
DELAY
VREF
100pF
4.7K
VREF
12K
12K
100nF
(*)
POSITIVE
SUPPLY
100
µF-35V
100
µF-10V
NEGATIVE
SUPPLY
100nF
SELECT
VCC
NOTES:
(*) The capacitor is required if the pin is left floating.
(**) If the negative supply is not used, the VSS pin must be connected to the COM pin as close as possible to the IC.
Figure 4. Gate driving waveforms test circuit.
L6353
7/11


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