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LF257N Folha de dados(PDF) 4 Page - STMicroelectronics |
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LF257N Folha de dados(HTML) 4 Page - STMicroelectronics |
4 / 14 page Notes : 1. Unless otherwise specified the absolute maximum negative input voltage is equal to the negative power supply voltage. 2. The temperature coefficient of the adjusted input offset voltage changes only a small amount (0.5 µV/oC typically) for each mV of adjustment from its original unadjusted value. Common-mode rejection and open loop voltage gain are alsounaffected by offset adjustment. 3. The input bias currents are junction leakage currents which approximately double for every 10 oC increase in the junction temperature Tamb. Due to limited production test time, the input bias current measured is correlated to junction temperature. In a normal operation the junction temperature rises above the ambient temperature as a result of internal power dissipation, Ptot-Tamb =Tamb +Rth(j-a)xPtot where Rth(j-a)is the thermal resistance from junction to ambient. Use of a heatsink is recommended f input currents are to be kept to a minimum. 4. Supply voltage rejection is measured for both supply magnitudes increasing or decreasing simultaneously, in accordance with common practise. 5. Settling time is defined here, for a unity gain inverter connection using 2k Ω resistors for the LF155, LF156 series. It is the time required for the error voltage (the voltage at the inverting input pin on the amplifier) to settle to within 0.01% of its final value from the time a 10V step input is applied to the inverter. For the LF157 series AV = -5, the feedback resistor from output to input is 2k Ω and the output step is 10V. ELECTRICAL CHARACTERISTICS LF355, LF356, LF357 0 oC ≤ Tamb ≤ +70oCVCC = ±15V, (unless otherwise specified) Symbol Parameter LF355 - LF356 - LF357 Unit Min. Typ. Max. Vio Input Offset Voltage (RS =50 Ω) Tamb =25 oC Tmin. ≤ Tamb ≤ Tmax. 310 13 mV Iio Input Offset Current - (note 3) Tamb =25 oC Tmin. ≤ Tamb ≤ Tmax. 350 2 pA nA Iib Input Bias Current - (note 3) Tamb =25 oC Tmin. ≤ Tamb ≤ Tmax. 20 200 8 pA nA Avd Large Signal Voltage Gain (RL =2k Ω,VO = ±10V) Tamb =25 oC Tmin. ≤ Tamb ≤ Tmax. 25 15 200 V/mV SVR Supply Voltage Rejection Ratio - (note 4) 80 100 dB ICC Supply Current (no load) Tamb =25 oC LF355 LF356, LF357 2 5 4 10 mA DVio Input Offset Voltage Drift (RS =50 Ω) - (note 2) 5 µV/oC DVio/Vio Change in Average Temperature Coefficient with Vio adjust (RS =50 Ω) 0.5 µV/oC per mV Vicm Input Common Mode Voltage Range (Tamb =25 oC) ±10 +15.1 -12 V CMR Common Mode Rejection Ratio 80 100 dB ±VOPP Output Voltage Swing RL = 10k Ω RL =2k Ω ±12 ±10 ±13 ±12 V GBP Gain Bandwidth Product Tamb =25 oC) LF355 LF356 LF357 2.5 5 20 MHz SR Slew Rate (Tamb =25 oC) AV = 1 LF355 LF356 AV = 5 LF357 5 12 50 V/ µs Ri Input Resistance (Tamb =25 oC) 10 12 Ω Ci Input Capacitance (Tamb = 25 oC) 3 pF en Equivalent Input Noise Voltage (Tamb =25 oC, RS = 100 Ω) f = 1000Hz LF355 LF356, LF357 f = 100Hz LF355 LF356, LF357 20 12 25 15 nV √ Hz in Equivalent Input Noise Current (Tamb =25 oC, f = 100Hz or f = 1000Hz) 0.01 pA √ Hz ts Settling Time (Tamb =25 oC) - (note 5) LF355 LF356, LF357 4 1.5 µs LF155 - LF156 - LF157 4/14 |
Nº de peça semelhante - LF257N |
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Descrição semelhante - LF257N |
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