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STGW39NC60VD Folha de dados(PDF) 4 Page - STMicroelectronics |
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STGW39NC60VD Folha de dados(HTML) 4 Page - STMicroelectronics |
4 / 15 page Electrical characteristics STGW39NC60VD 4/15 2 Electrical characteristics (TCASE=25 °C unless otherwise specified) Table 4. Static Symbol Parameter Test conditions Min. Typ Max. Unit V(BR)CES Collector-emitter breakdown voltage (VGE = 0) IC = 1 mA 600 V VCE(sat) Collector-emitter saturation voltage VGE = 15 V, IC = 30 A VGE = 15 V, IC = 30 A,TC=125 °C 1.8 1.7 2.5 V V VGE(th) Gate threshold voltage VCE= VGE, IC=1 mA 3.75 5.75 V ICES Collector-emitter cut-off current (VGE = 0) VCE = 600 V VCE= 600 V, TC = 125 °C 500 5 µA mA IGES Gate-emitter cut-off current (VCE = 0) VGE = ± 20 V ±100 nA gfs (1) 1. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Forward transconductance VCE = 15 V, IC= 30 A 20 S Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max Unit Cies Coes Cres Input capacitance Output capacitance Reverse transfer capacitance VCE = 25 V, f = 1 MHz, VGE= 0 2900 298 59 pF pF pF Qg Qge Qgc Total gate charge Gate-emitter charge Gate-collector charge VCE = 390 V, IC = 30 A, VGE = 15 V (see Figure 19) 126 16 46 nC nC nC |
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