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IRF1405 Folha de dados(PDF) 1 Page - International Rectifier |
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IRF1405 Folha de dados(HTML) 1 Page - International Rectifier |
1 / 10 page Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 169 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 118 A IDM Pulsed Drain Current 680 PD @TC = 25°C Power Dissipation 330 W Linear Derating Factor 2.2 W/°C VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy 560 mJ IAR Avalanche Current See Fig.12a, 12b, 15, 16 A EAR Repetitive Avalanche Energy mJ dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Mounting Torque, 6-32 or M3 screw 10 lbf•in (1.1N•m) HEXFET® Power MOSFET Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. S D G Absolute Maximum Ratings VDSS = 55V RDS(on) = 5.3mΩ ID = 169A Description 12/07/04 www.irf.com 1 Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Benefits AUTOMOTIVE MOSFET Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case ––– 0.45 °C/W RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– RθJA Junction-to-Ambient ––– 62 TO-220AB IRF1405 Typical Applications Electric Power Steering (EPS) Anti-lock Braking System (ABS) Wiper Control Climate Control Power Door PD-93991D |
Nº de peça semelhante - IRF1405 |
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Descrição semelhante - IRF1405 |
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