IRFB3806PBF datasheet(2/11 Pages) IRF

Nome de Peças	IRFB3806PBF

Descrição Electrónicos	HEXFETPower MOSFET

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Fabricante Electrônico	IRF [International Rectifier]

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IRFB/S/SL3806PbF

2

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Notes:

Repetitive rating; pulse width limited by max. junction

temperature.

Limited by TJmax, starting TJ = 25°C, L = 0.23mH

RG = 25Ω, IAS = 25A, VGS =10V. Part not recommended for

use above this value.

ISD ≤ 25A, di/dt ≤ 1580A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.

Pulse width ≤ 400µs; duty cycle ≤ 2%.

S

D

G

Coss eff. (TR) is a fixed capacitance that gives the same charging time

as Coss while VDS is rising from 0 to 80% VDSS.

Coss eff. (ER) is a fixed capacitance that gives the same energy as

Coss while VDS is rising from 0 to 80% VDSS.

When mounted on 1" square PCB (FR-4 or G-10 Material). For recom

mended footprint and soldering techniques refer to application note #AN-994.

Rθ is measured at TJ approximately 90°C.

Static @ TJ = 25°C (unless otherwise specified)

Symbol

Parameter

Min. Typ. Max. Units

V(BR)DSS

Drain-to-Source Breakdown Voltage

60

–––

V

∆V

(BR)DSS/

∆T

J

Breakdown Voltage Temp. Coefficient

–––

0.075

–––

V/°C

RDS(on)

Static Drain-to-Source On-Resistance

–––

12.6

15.8

m

Ω

VGS(th)

Gate Threshold Voltage

2.0

–––

4.0

V

IDSS

Drain-to-Source Leakage Current

–––

20

µA

–––

250

IGSS

Gate-to-Source Forward Leakage

–––

100

nA

Gate-to-Source Reverse Leakage

–––

-100

Dynamic @ TJ = 25°C (unless otherwise specified)

Symbol

Parameter

Min. Typ. Max. Units

gfs

Forward Transconductance

41

–––

S

Qg

Total Gate Charge

–––

22

30

nC

Qgs

Gate-to-Source Charge

–––

5.0

–––

Qgd

Gate-to-Drain ("Miller") Charge

–––

6.3

–––

Qsync

Total Gate Charge Sync. (Qg - Qgd)

–––

28.3

–––

RG(int)

Internal Gate Resistance

–––

0.79

–––

Ω

td(on)

Turn-On Delay Time

–––

6.3

–––

ns

tr

Rise Time

–––

40

–––

td(off)

Turn-Off Delay Time

–––

49

–––

tf

Fall Time

–––

47

–––

Ciss

Input Capacitance

–––

1150

–––

Coss

Output Capacitance

–––

130

–––

Crss

Reverse Transfer Capacitance

–––

67

–––

pF

Coss eff. (ER) Effective Output Capacitance (Energy Related)

h –––

190

–––

Coss eff. (TR) Effective Output Capacitance (Time Related)

g

–––

230

–––

Diode Characteristics

Symbol

Parameter

Min. Typ. Max. Units

IS

Continuous Source Current

–––

43

A

(Body Diode)

ISM

Pulsed Source Current

–––

170

(Body Diode)

c

VSD

Diode Forward Voltage

–––

1.3

V

trr

Reverse Recovery Time

–––

22

33

ns

TJ = 25°C

VR = 51V,

–––

26

39

TJ = 125°C

IF = 25A

Qrr

Reverse Recovery Charge

–––

17

26

nC

TJ = 25°C

di/dt = 100A/µs

f

–––

24

36

TJ = 125°C

IRRM

Reverse Recovery Current

–––

1.4

–––

A

TJ = 25°C

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Conditions

VDS = 10V, ID = 25A

ID = 25A

VGS = 20V

VGS = -20V

MOSFET symbol

showing the

VDS = 30V

Conditions

VGS = 10V

f

VGS = 0V

VDS = 50V

ƒ = 1.0MHz

VGS = 0V, VDS = 0V to 60V

h

VGS = 0V, VDS = 0V to 60V

g

TJ = 25°C, IS = 25A, VGS = 0V

f

integral reverse

p-n junction diode.

Conditions

VGS = 0V, ID = 250µA

Reference to 25°C, ID = 5mA

c

VGS = 10V, ID = 25A

f

VDS = VGS, ID = 50µA

VDS = 60V, VGS = 0V

VDS = 48V, VGS = 0V, TJ = 125°C

ID = 25A

RG = 20

Ω

VGS = 10V

f

VDD = 39V

ID = 25A, VDS =0V, VGS = 10V

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