SI6435ADQ datasheet(2/5 Pages) VISHAY

Nome de Peças	SI6435ADQ

Descrição Electrónicos	P-Channel 30-V (D-S) MOSFET

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Fabricante Electrônico	VISHAY [Vishay Siliconix]

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Document Number: 71104

S-80682-Rev. B, 31-Mar-08

Vishay Siliconix

Si6435ADQ

Notes:

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS

25 °C, unless otherwise noted

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = - 250 µA

- 1.0

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 20 V

± 100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = - 24 V, VGS = 0 V

- 1

µA

VDS = - 24 V, VGS = 0 V, TJ = 70 °C

- 10

On-State Drain Currenta

ID(on)

VDS = - 5 V, VGS = - 10 V

- 30

A

VDS = - 5 V, VGS = - 4.5 V

- 7

Drain-Source On-State Resistancea

RDS(on)

VGS = - 10 V, ID = - 5.5 A

0.024

0.030

Ω

VGS = - 4.5 V, ID = - 4.1 A

0.042

0.055

Forward Transconductancea

gfs

VDS = - 15 V, ID = - 5.5 A

12

S

Diode Forward Voltagea

VSD

IS = - 1.3 A, VGS = 0 V

- 0.8

- 1.1

V

Dynamicb

Total Gate Charge

Qg

VDS = - 15 V, VGS = - 5 V, ID = - 5.5 A

15

20

nC

Gate-Source Charge

Qgs

5.7

Gate-Drain Charge

Qgd

5.0

Turn-On Delay Time

td(on)

VDD = - 15 V, RL = 15 Ω

ID ≅ - 1 A, VGEN = - 10 V, RG = 6 Ω

12

20

ns

Rise Time

tr

10

20

Turn-Off Delay Time

td(off)

42

60

Fall Time

tf

17

25

Source-Drain Reverse Recovery Time

trr

IF = - 1.3 A, di/dt = 100 A/µs

40

80

Output Characteristics

0

6

12

18

24

30

02468

10

VGS = 10 thru 5 V

2 V

VDS - Drain-to-Source Voltage (V)

4 V

3 V

Transfer Characteristics

0

6

12

18

24

30

012345

TC = 125 °C

- 55 °C

25 °C

VGS - Gate-to-Source Voltage (V)

Nº de peça semelhante - SI6435ADQ

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Vishay Siliconix	SI6435ADQ	62Kb / 3P	P-Channel 30-V (D-S) MOSFET Rev. A, 29-Nov-99
	SI6435ADQ	203Kb / 10P	P-Channel 30-V (D-S) MOSFET Rev. B, 31-Mar-08
	SI6435ADQ-T1-E3	203Kb / 10P	P-Channel 30-V (D-S) MOSFET Rev. B, 31-Mar-08
	SI6435ADQ-T1-E3	203Kb / 10P	P-Channel 30-V (D-S) MOSFET Rev. B, 31-Mar-08
VBsemi Electronics Co.,...	SI6435ADQ-T1-GE3	978Kb / 8P	P-Channel 20-V (G-S) MOSFET

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Descrição semelhante - SI6435ADQ

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Vishay Siliconix	SI2341DS	43Kb / 5P	P-Channel 30-V (D-S) MOSFET Rev. B, 11-Aug-03
Vishay Siliconix	SI4835BDY	90Kb / 6P	P-Channel 30-V (D-S) MOSFET Rev. D, 25-Oct-0
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Vishay Siliconix	SI7423DN	173Kb / 3P	P-Channel 30-V (D-S) MOSFET 24-May-04
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Vishay Siliconix	SI4435DDY-T1-GE3	279Kb / 10P	P-Channel 30-V (D-S) MOSFET Rev. C, 18-May-09
	SI7121DN	552Kb / 13P	P-Channel 30-V (D-S) MOSFET Rev. C, 23-Jun-08
	SI4825DDY-T1	242Kb / 10P	P-Channel 30-V (D-S) MOSFET Rev. A, 13-Oct-08
	SI7129DN	566Kb / 13P	P-Channel 30 V (D-S) MOSFET Rev. B, 06-Sep-10

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