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SI4396DY Folha de dados(PDF) 1 Page - Vishay Siliconix |
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SI4396DY Folha de dados(HTML) 1 Page - Vishay Siliconix |
1 / 7 page Vishay Siliconix Si4396DY New Product Document Number: 74252 S-61223-Rev. A, 17-Jul-06 www.vishay.com 1 N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested APPLICATIONS • Notebook Logic DC/DC - Low Side PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) a Qg (Typ) 30 0.0115 at VGS = 10 V 16 13.3 nC 0.016 at VGS = 4.5 V 12.7 SCHOTTKY AND BODY DIODE PRODUCT SUMMARY VDS (V) VSD (V) Diode Forward Voltage IS (A) 30 0.4 at 2 A 5a SO-8 SD SD SD GD 5 6 7 8 Top View 2 3 4 1 Ordering Information : Si4396DY-T1-E3 (Lead (Pb)-free) N-Channel MOSFET G S D Schottky Diode Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 Board. c. t = 10 sec. d. Maximum under Steady State conditions is 85 °C/W. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 16 A TC = 70 °C 12.7 TA = 25 °C 12.3b, c TA = 70 °C 9.7b, c Pulsed Drain Current IDM 40 Continuous Source-Drain Diode Current TC = 25 °C IS 5 TA = 25 °C 2.8b, c Single Pulse Avalanche Current L = 0.1 mH IAS 20 Single Pulse Avalanche Energy EAS 20 mJ Maximum Power Dissipation TC = 25 °C PD 5.4 W TC = 70 °C 3.4 TA = 25 °C 3.1b, c TA = 70 °C 2.0b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typ Max Unit Maximum Junction-to-Ambientb, d t ≤ 10 sec RthJA 34 40 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 17 23 RoHS COMPLIANT |
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Descrição semelhante - SI4396DY |
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