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SI1012X Folha de dados(PDF) 2 Page - Vishay Siliconix

Nome de Peças SI1012X
Descrição Electrónicos  N-Channel 1.8-V (G-S) MOSFET
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Fabricante Electrônico  VISHAY [Vishay Siliconix]
Página de início  http://www.vishay.com
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Si1012R/X
Vishay Siliconix
www.vishay.com
2
Document Number: 71166
S-50366—Rev. B, 28-Feb-05
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 mA
0.45
0.9
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "4.5 V
"0.5
"1.0
mA
Zero Gate Voltage Drain Current
IDSS
VDS = 20 V, VGS = 0 V
0.3
100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 20 V, VGS = 0 V, TJ = 85_C
5
mA
On-State Drain Currenta
ID(on)
VDS = 5 V, VGS = 4.5 V
700
mA
VGS = 4.5 V, ID = 600 mA
0.41
0.70
Drain-Source On-State Resistancea
rDS(on)
VGS = 2.5 V, ID = 500 m A
0.53
0.85
W
DS(on)
VGS = 1.8 V, ID = 350 m A
0.70
1.25
Forward Transconductancea
gfs
VDS = 10 V, ID = 400 mA
1.0
S
Diode Forward Voltagea
VSD
IS = 150 mA, VGS = 0 V
0.8
1.2
V
Dynamicb
Total Gate Charge
Qg
750
Gate-Source Charge
Qgs
VDS = 10 V, VGS = 4.5 V, ID = 250 mA
75
pC
Gate-Drain Charge
Qgd
225
Turn-On Delay Time
td(on)
5
Rise Time
tr
VDD = 10 V, RL = 47 W
5
ns
Turn-Off Delay Time
td(off)
VDD = 10 V, RL = 47 W
ID ^ 200 mA, VGEN = 4.5 V, RG = 10 W
25
ns
Fall Time
tf
11
Notes
a.
Pulse test; pulse width v 300 ms, duty cycle v 2%.
b.
Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.


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