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STD6NM60N-1 Folha de dados(PDF) 3 Page - STMicroelectronics

Nome de Peças STD6NM60N-1
Descrição Electrónicos  N-channel 600V - 0.85廓 - 4.6A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh??Power MOSFET
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
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STD6NM60N - STD6NM60N-1 - STF6NM60N - STP6NM60N
Electrical ratings
3/17
1
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
TO-220
DPAK/IPAK
TO-220FP
VDS
Drain-source voltage (VGS=0)
600
V
VGS
Gate-source voltage
± 25
V
ID
Drain current (continuous) at TC = 25°C
4.6
4.6 (1)
1.
Limited by maximum temperature allowed
A
ID
Drain current (continuous) at TC = 100°C
2.9
2.9 (1)
A
IDM
(2)
2.
Pulse width limited by safe operating area
Drain current (pulsed)
18.4
18.4 (1)
A
PTOT
Total dissipation at TC = 25°C
45
20
W
dv/dt (3)
3.
ISD ≤4.6A, di/dt ≤400A/µs, VDD = 80% V(BR)DSS
Peak diode recovery voltage slope
15
V/ns
VISO
Insulation withstand voltage (RMS) from all three
leads to external heat sink (t=1s;TC=25°C)
--
2500
V
Tj
Tstg
Operating junction temperature
Storage temperature
-55 to 150
°C
Table 2.
Thermal data
Symbol
Parameter
Value
Unit
TO-220
DPAK/IPAK
TO-220FP
Rthj-case
Thermal resistance junction-case max
2.78
6.25
°C/W
Rthj-amb
Thermal resistance junction-amb max
62.5
°C/W
Tl
Maximum lead temperature for soldering
purpose
300
°C
Table 3.
Avalanche characteristics
Symbol
Parameter
Value
Unit
IAS
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
2A
EAS
Single pulse avalanche energy
(starting Tj=25°C, ID=IAS, VDD= 50V)
65
mJ


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