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IRF7421D1 Folha de dados(PDF) 1 Page - International Rectifier

Nome de Peças IRF7421D1
Descrição Electrónicos  MOSFET / Schottky Diode
Download  8 Pages
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Fabricante Electrônico  IRF [International Rectifier]
Página de início  http://www.irf.com
Logo IRF - International Rectifier

IRF7421D1 Folha de dados(HTML) 1 Page - International Rectifier

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1
Parameter
Maximum
Units
ID @ TA = 25°C
Continuous Drain Current, V
GS@10V

5.8
A
ID @ TA = 70°C
4.6
IDM
Pulsed Drain Current Œ
46
PD @TA = 25°C
Power Dissipation 
2.0
W
PD @TA = 70°C
1.3
Linear Derating Factor
16
W/°C
VGS
Gate-to-Source Voltage
± 20
V
dv/dt
Peak Diode Recovery dv/dt 
-5.0
V/ns
TJ, TSTG
Junction and Storage Temperature Range
-55 to +150
°C
IRF7421D1
PRELIMINARY
FETKY
MOSFET / Schottky Diode
Notes:
ΠRepetitive rating; pulse width limited by maximum junction temperature (see figure 11)
 I
SD ≤ 4.1A, di/dt ≤ 110A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
Ž Pulse width
≤ 300µs; duty cycle ≤ 2%
 Surface mounted on FR-4 board, t
≤ 10sec.
Parameter
Maximum
Units
RθJA
Junction-to-Ambient 
62.5
°C/W
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Thermal Resistance Ratings
8/20/98
The FETKY
family of co-packaged HEXFETs and Schottky diodes offer
the designer
an
innovative board space saving solution for switching
regulator applications. Generation 5 HEXFETs utilize advanced processing
techniques to achieve extremely low on-resistance per silicon area. Combining
this technology
with International Rectifier's low forward drop Schottky
rectifiers results in an extremely efficient device suitable for use in a wide
variety of portable electronics applications.
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics. The SO-8 package is designed for vapor phase,
infrared or wave soldering techniques.
Description
l Co-packaged HEXFET® Power
MOSFET and Schottky Diode
l Ideal For Synchronous Regulator
Applications
l Generation V Technology
l SO-8 Footprint
VDSS = 30V
RDS(on) = 0.035Ω
Schottky Vf = 0.39V
8
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3
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7
D
D
D
D
G
S
A
S
A
A
Top V iew
SO -8
TM
PD- 91411C
7421d1.p65
8/20/98, 4:07 PM
1


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