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BTB26 Folha de dados(PDF) 3 Page - Sirectifier Semiconductors |
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BTB26 Folha de dados(HTML) 3 Page - Sirectifier Semiconductors |
3 / 4 page BTB/BTA26 Discrete Triacs(Non-Isolated/Isolated) F ig. 1: Maximum power dis s ipation vers us R MS on-s tate current (full cycle). F ig. 2-1: R MS on-s tate current vers us cas e temperature (full cycle). F ig. 3: R elative variation of thermal impedance vers us puls e duration. F ig. 4: O n-s tate characteris tics (maximum values ). F ig. 5: S urge peak on-s tate current versus number of cycles. 0 5 10 15 20 25 0 5 10 15 20 25 30 IT (R MS ) (A ) P (W) 0 25 50 75 100 125 0 5 10 15 20 25 30 T c(°C ) IT (R MS ) (A ) B TA 24 B T B /T 25 B TA 25/26 1E -3 1E -2 1E -1 1E +0 1E +1 1E +2 5E +2 1E -3 1E -2 1E -1 1E +0 tp (s ) K =[Zth/R th] Zth(j-c) Zth(j-a) B TA/B T B 24/T 25 Zth(j-a) B TA26 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 1 10 100 300 V T M (V ) IT M (A ) T j=25°C T j max T j max. V to = 0.85V R d = 16 m Ω 1 10 100 1000 0 50 100 150 200 250 300 Number of c ycles IT S M (A ) Non repetitive T j initial=25°C R epetitive T c=75°C One cycle t=20ms |
Nº de peça semelhante - BTB26 |
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Descrição semelhante - BTB26 |
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