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6N136-X009 Folha de dados(PDF) 1 Page - Vishay Siliconix

Nome de Peças 6N136-X009
Descrição Electrónicos  High Speed Optocoupler, 1 MBd, Phtotdiode with Transistor Output
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Fabricante Electrônico  VISHAY [Vishay Siliconix]
Página de início  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

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High Speed Optocoupler, 1 MBd, Phtotdiode with Transistor Output
www.vishay.com
For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83604
168
Rev. 1.5, 07-May-08
6N135/6N136
Vishay Semiconductors
DESCRIPTION
The 6N135 and 6N136 are optocouplers with a GaAIAs
infrared emitting diode, optically coupled with an integrated
photo detector which consists of a photo diode and a
high-speed transistor in a DIP-8 plastic package.
Signals can be transmitted between two electrically
separated circuits up to frequencies of 2.0 MHz. The
potential difference between the circuits to be coupled
should not exceed the maximum permissible reference
voltages.
FEATURES
• Isolation test voltages: 5300 VRMS
• TTL compatible
• High bit rates: 1.0 Mbit/s
• High common-mode interference immunity
• Bandwidth 2.0 MHz
• Open-collector output
• External base wiring possible
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC and
WEEE 2002/96/EC
AGENCY APPROVALS
• UL1577, file no. E52744 system code H or J, double
protection
• DIN EN 60747-5-5 available with option 1
• CSA 93751
Note
For additional information on the available options refer to option information.
i179081
1
2
3
4
8
7
6
5
C(VCC)
NC
A
C
NC
B(VB)
C(VO)
E(GND)
ORDER INFORMATION
PART
REMARKS
6N135
CTR
≥ 7 %, DIP-8
6N136
CTR
≥ 19 %, DIP-8
6N135-X007
CTR
≥ 7 %, SMD-8 (option 7)
6N136-X006
CTR
≥ 19 %, DIP-8 400 mil (option 6)
6N136-X007
CTR
≥ 19 %, SMD-8 (option 7)
6N136-X009
CTR
≥ 19 %, SMD-8 (option 9)
ABSOLUTE MAXIMUM RATINGS (1)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage
VR
5.0
V
Forward current
IF
25
mA
Peak forward current
t = 1.0 ms, duty cycle 50 %
IFSM
50
mA
Maximum surge forward current
t
≤ 1.0 µs, 300 pulses/s
1.0
A
Thermal resistance
Rth
700
K/W
Power dissipation
Tamb = 70 °C
Pdiss
45
mW
OUTPUT
Supply voltage
VS
- 0.5 to 15
V
Output voltage
VO
- 0.5 to 15
V
Emitter base voltage
VEBO
5.0
V
Output current
IO
8.0
mA
Maximum Output current
16
mA
Base current
IB
5.0
mA
Thermal resistance
300
K/W
Power dissipation
Tamb = 70 °C
Pdiss
100
mW


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