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SS5P4-E386A Folha de dados(PDF) 1 Page - Vishay Siliconix |
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SS5P4-E386A Folha de dados(HTML) 1 Page - Vishay Siliconix |
1 / 5 page New Product SS5P3 & SS5P4 Vishay General Semiconductor Document Number: 88982 Revision: 22-Nov-07 www.vishay.com 1 High Current Density Surface Mount Schottky Barrier Rectifiers FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in low voltage high frequency inverters, freewheeling, dc-to-dc converters and polarity protection applications. MECHANICAL DATA Case: TO-277A (SMPC) Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for commercial grade, meets JESD 201 class 1A whisker test, HE3 suffix for high reliability grade (AEC Q101 qualified), meets JESD 201 class 2 whisker test PRIMARY CHARACTERISTICS IF(AV) 5 A VRRM 30 V, 40 V IFSM 150 A EAS 20 mJ VF at IF = 5.0 A 0.403 V TJ max. 150 °C K 2 1 TO-277A (SMPC) Anode 1 Anode 2 Cathode K eSMPTM Series MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL SS5P3 SS5P4 UNIT Device marking code S53 S54 Maximum repetitive peak reverse voltage VRRM 30 40 V Maximum average forward rectified current (Fig. 1) IF(AV) 5.0 A Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 150 A Non-repetitive avalanche energy at IAS = 2 A, TJ = 25 °C EAS 20 mJ Operating junction and storage temperature range TJ, TSTG - 55 to + 150 °C |
Nº de peça semelhante - SS5P4-E386A |
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Descrição semelhante - SS5P4-E386A |
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