STD7NM50N datasheet(4/17 Pages) STMICROELECTRONICS

Nome de Peças	STD7NM50N

Descrição Electrónicos	N-channel 500V - 0.70廓 - 5A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh??Power MOSFET

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Fabricante Electrônico	STMICROELECTRONICS [STMicroelectronics]

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Electrical characteristics

STD7NM50N - STD7NM50N-1 - STF7NM50N - STP7NM50N

4/17

2

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 4.

On/off states

Symbol

Parameter

Test conditions

Min

Typ

Max

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 1mA, VGS= 0

500

V

dv/dt(1)

1.

Characteristics value at turn off on inductive load

Drain-source voltage slope

Vdd = 400V, Id = 5A,

Vgs = 10V

40

V/ns

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = Max rating,

VDS = Max rating,Tc = 125°C

1

100

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±20V

100

nA

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250µA

23

4

V

RDS(on)

Static drain-source on

resistance

VGS= 10V, ID=2.5A

0.70

0.78

Ω

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

1.

Pulsed: pulse duration = 300µs, duty cycle 1.5%

Forward transconductance

VDS =15V, ID= 2.5A

4S

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 50V, f =1 MHz, VGS = 0

400

35

4

pF

Coss eq.

(2)

2.

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS

Equivalent output

capacitance

VGS = 0V, VDS = 0V to 400V

67

pF

Rg

Gate input resistance

f=1MHz Gate DC Bias=0

Test signal level=20mV

Open drain

6

Ω

Qg

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 400V, ID = 5A

VGS = 10V

(see Figure 16)

12

2

6

nC

Nº de peça semelhante - STD7NM50N

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
STMicroelectronics	STD7NM60N	885Kb / 17P	N-channel 600 V, 5 A, 0.84 ohm, DPAK, TO-220FP, TO-220, IPAK second generation MDmesh Power MOSFET
Inchange Semiconductor ...	STD7NM60N	324Kb / 2P	isc N-Channel MOSFET Transistor
STMicroelectronics	STD7NM64N	992Kb / 16P	Low input capacitance and gate charge August 2013 Rev 1
	STD7NM80	977Kb / 17P	N-channel 800 V, 0.95 廓, 6.5 A TO-220, TO-220FP, IPAK, DPAK MDmesh??Power MOSFET
	STD7NM80-1	977Kb / 17P	N-channel 800 V, 0.95 廓, 6.5 A TO-220, TO-220FP, IPAK, DPAK MDmesh??Power MOSFET

More results

Descrição semelhante - STD7NM50N

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
STMicroelectronics	STD9NM50N	491Kb / 17P	N-channel 500V - 0.47廓 - 7.5A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh??Power MOSFET
	STD6NM60N	619Kb / 17P	N-channel 600V - 0.85廓 - 4.6A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh??Power MOSFET
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	STD8NM60N	492Kb / 17P	N-channel 600 V - 0.56 廓 - 7 A - TO-220 - TO-220FP - IPAK - DPAK second generation MDmesh??Power MOSFET
	STD11NM60N-1	623Kb / 21P	N-channel 600 V - 0.37 廓 - 10 A - TO-220 - TO-220FP- I2PAK - IPAK DPAK - D2PAK second generation MDmesh??Power MOSFET
	STB12NM50N	510Kb / 18P	N-channel 500V - 0.29廓 - 11A - TO-220 /FP- D2PAK - DPAK Second generation MDmesh??Power MOSFET
	STF7NM60N	885Kb / 17P	N-channel 600 V, 5 A, 0.84 ohm, DPAK, TO-220FP, TO-220, IPAK second generation MDmesh Power MOSFET
	STD7NM80	977Kb / 17P	N-channel 800 V, 0.95 廓, 6.5 A TO-220, TO-220FP, IPAK, DPAK MDmesh??Power MOSFET
	STP8NM60	603Kb / 13P	N-CHANNEL 600V - 0.9ohm - 8A TO-220/TO-220FP/DPAK/IPAK MDmesh??Power MOSFET

More results

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