CD74HCT670 datasheet(4/17 Pages) TAOS

Nome de Peças	CD74HCT670

Descrição Electrónicos	High-Speed CMOS Logic 4x4 Register File

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4

Quiescent Device

Current

ICC

VCC or

GND

0

6

-

8

-

80

-

160

µA

Three- State Leakage

Current

VIL or VIH

VO =

VCC or

GND

6-

-

±0.5

-

±5.0

-

±10

µA

HCT TYPES

High Level Input

Voltage

VIH

-

4.5 to

5.5

2-

-

2

-

2

-

V

Low Level Input

Voltage

VIL

-

4.5 to

5.5

-

0.8

-

0.8

-

0.8

V

High Level Output

Voltage

CMOS Loads

VOH

VIH or VIL

-0.02

4.5

4.4

-

4.4

-

4.4

-

V

High Level Output

Voltage

TTL Loads

-6

4.5

3.98

-

3.84

-

3.7

-

V

Low Level Output

Voltage

CMOS Loads

VOL

VIH or VIL

0.02

4.5

-

0.1

-

0.1

-

0.1

V

Low Level Output

Voltage

TTL Loads

6

4.5

-

0.26

-

0.33

-

0.4

V

Input Leakage

Current

II

VCC and

GND

0

5.5

-

±0.1

-

±1-

±1

µA

Quiescent Device

Current

ICC

VCC or

GND

0

5.5

-

8

-

80

-

160

µA

Three- State Leakage

Current

VIL or VIH

VO =

VCC or

GND

5.5

-

±0.5

-

±5.0

-

±10

µA

Additional Quiescent

Device Current Per

Input Pin: 1 Unit Load

∆ICC

(Note 4)

VCC

-2.1

-

4.5 to

5.5

-

100

360

-

450

-

490

µA

NOTE:

4. For dual-supply systems theoretical worst case (VI = 2.4V, VCC = 5.5V) specification is 1.8mA.

DC Electrical Speciﬁcations (Continued)

PARAMETER

SYMBOL

TEST

CONDITIONS

VCC

(V)

25oC

-40oC TO 85oC -55oC TO 125oC

UNITS

VI (V)

IO (mA)

MIN

TYP

MAX

MIN

MAX

MIN

MAX

HCT Input Loading Table

INPUT

UNIT LOADS

WE

0.3

WA0

0.2

WA1

0.4

RE

1.5

DATA

0.15

RA0

0.4

RA1

0.7

NOTE: Unit Load is

∆ICC limit speciﬁc in DC Electrical Speciﬁcations

Table, e.g., 360

µA max. at 25oC.

CD54HC670, CD74HC670, CD74HCT670

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