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KM416S1120DT-GF10 Folha de dados(PDF) 6 Page - Samsung semiconductor |
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KM416S1120DT-GF10 Folha de dados(HTML) 6 Page - Samsung semiconductor |
6 / 43 page KM416S1120D CMOS SDRAM - 6 - Rev. 1.4 (Jun. 1999) 1. Unless otherwise notes, Input level is CMOS(VIH/VIL=VDDQ/VSSQ) in LVTTL. 2. Measured with outputs open. Addresses are changed only one time during tcc(min). 3. Refresh period is 32ms. Addresses are changed only one time during tcc(min). 4. KM416S1120DT-G** 5. KM416S1120DT-F** Note : DC CHARACTERISTICS (Recommended operating condition unless otherwise noted, TA = 0 to 70 °C) Parameter Symbol Test Condition CAS Latency Version Unit Note -C -6 -7 -8 -10 Operating Current (One Bank Active) ICC1 Burst Length =1 tRC ≥tRC(min) Io = 0 mA 3 120 115 105 95 85 mA 2 2 - - 110 95 80 Precharge Standby Cur- rent in power-down mode ICC2P CKE ≤VIL(max), tCC = 15ns 2 mA ICC2PS CKE & CLK ≤VIL(max), tCC = ∞ 2 Precharge Standby Current in non power-down mode ICC2N CKE ≥VIH(min), CS≥VIH(min), tCC = 15ns Input signals are changed one time during 30ns 15 mA ICC2NS CKE ≥VIH(min), CLK≤VIL(max), tCC = ∞ Input signals are stable 5 Active Standby Current in power-down mode ICC3P CKE ≤VIL(max), tCC = 15ns 3 mA ICC3PS CKE & CLK ≤VIL(max), tCC = ∞ 3 Active Standby Current in non power-down mode (One Bank Active) ICC3N CKE ≥VIH(min), CS≥VIH(min), tCC = 15ns Input signals are changed one time during 30ns 25 mA ICC3NS CKE ≥VIH(min), CLK≤VIL(max), tCC = ∞ Input signals are stable 15 mA Operating Current (Burst Mode) ICC4 Io = 0 mA Page Burst 2Banks Activated tCCD = 2CLKs 3 155 150 140 130 115 mA 2 2 - - 125 115 100 Refresh Current ICC5 tRC ≥tRC(min) 3 105 100 90 90 80 mA 3 2 - - 100 90 80 Self Refresh Current ICC6 CKE ≤0.2V 1 mA 4 250 uA 5 |
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Descrição semelhante - KM416S1120DT-GF10 |
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