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STD35NF06T4 Folha de dados(PDF) 3 Page - STMicroelectronics |
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STD35NF06T4 Folha de dados(HTML) 3 Page - STMicroelectronics |
3 / 13 page STD35NF06 Electrical ratings 3/13 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 60 V VDGR Drain-gate voltage (RGS = 20 kΩ)60 V VGS Gate- source voltage ± 20 V ID Drain current (continuous) at TC = 25°C 35 A ID Drain current (continuous) at TC = 100°C 24.5 A IDM (1) 1. Pulse width limited by safe operating area. Drain current (pulsed) 140 A Ptot Total dissipation at TC = 25°C 80 W Derating Factor 0.53 W/°C dv/dt(2) 2. ISD ≤35A, di/dt ≤100A/µs, VDD =V(BR)DSS, Tj ≤TJMAX Peak diode recovery avalanche energy 5 V/ns Tstg Storage temperature -55 to 175 °C Tj Max. operating junction temperature Table 2. Thermal data Rthj-case Thermal resistance junction-case max 1.88 °C/W Rthj-amb Thermal resistance junction-to ambient max 100 °C/W TJ Maximum lead temperature for soldering purpose 275 °C Table 3. Avalanche characteristics Symbol Parameter Max value Unit IAR Avalanche Current, Repetitive Or Not- repetitive (pulse width limited by Tj max) 17.5 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 130 mJ |
Nº de peça semelhante - STD35NF06T4 |
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Descrição semelhante - STD35NF06T4 |
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