STP20NK50Z_04 datasheet(3/13 Pages) STMICROELECTRONICS

Nome de Peças	STP20NK50Z

Descrição Electrónicos	N-CHANNEL 500V -0.23廓- 17A TO-220/D2PAK/I2SPAK/TO-247 Zener-Protected SuperMESH??MOSFET

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Fabricante Electrônico	STMICROELECTRONICS [STMicroelectronics]

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STP20NK50Z - STB20NK50Z - STW20NK50Z - STB20NK50Z-S

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)

ON/OFF

DYNAMIC

SWITCHING ON/OFF

SOURCE DRAIN DIODE

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%

VDSS.

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID =1mA,VGS = 0

500

V

IDSS

Zero Gate Voltage

Drain Current (VGS =0)

VDS =Max Rating

VDS =Max Rating,TC = 125 °C

1

50

µA

IGSS

Gate-body Leakage

Current (VDS =0)

VGS = ± 20 V

±10

µA

VGS(th)

Gate Threshold Voltage

VDS =VGS,ID = 100 µA

3

3.75

4.5

V

RDS(on)

Static Drain-source On

Resistance

VGS =10V, ID = 8.5 A

0.23

0.27

Ω

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs (1)

Forward Transconductance

VDS =15V, ID =8.5 A

13

S

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

VDS = 25V,f= 1MHz,VGS = 0

2600

328

72

pF

Coss eq. (3)

Equivalent Output

Capacitance

VGS =0V, VDS = 0V to 640V

187

pF

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(on)

tr

td(off)

tf

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

VDD =250 V, ID =8.5 A

RG =4.7Ω , VGS =10V

(Resistive Load see, Figure 3)

28

20

70

15

ns

Qg

Qgs

Qgd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

VDD =400 V, ID =17 A,

VGS =10 V

85

15.5

42

119

nC

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ISD

ISDM (2)

Source-drain Current

Source-drain Current (pulsed)

17

68

A

VSD (1)

ForwardOnVoltage

ISD =17A,VGS =0

1.6

V

trr

Qrr

IRRM

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

ISD =17A,di/dt =100 A/µs

VR = 100 V, Tj =25°C

(see test circuit, Figure 5)

355

3.90

22

ns

µC

A

trr

Qrr

IRRM

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

ISD =17A,di/dt =100 A/µs

VR = 100 V, Tj =150°C

(see test circuit, Figure 5)

440

5.72

26

ns

µC

A

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