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IRFB3607PBF Folha de dados(PDF) 2 Page - International Rectifier |
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IRFB3607PBF Folha de dados(HTML) 2 Page - International Rectifier |
2 / 11 page IRFB/S/SL3607PbF 2 www.irf.com S D G I SD ≤ 46A, di/dt ≤ 1920A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 400µs; duty cycle ≤ 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. When mounted on 1" square PCB (FR-4 or G-10 Material). For recom- mended footprint and soldering techniques refer to application note #AN-994. Rθ is measured at TJ approximately 90°C. Notes: Calculated continuous current based on maximum allowable junction temperature. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. Repetitive rating; pulse width limited by max. junction temperature. Limited by T Jmax, starting TJ = 25°C, L = 0.12mH RG = 25Ω, IAS = 46A, VGS =10V. Part not recommended for use above this value. Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 75 ––– ––– V ∆V (BR)DSS/ ∆T J Breakdown Voltage Temp. Coefficient ––– 0.096 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 7.34 9.0 m Ω VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V IDSS Drain-to-Source Leakage Current ––– ––– 20 µA ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100 Dynamic @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units gfs Forward Transconductance 170 ––– ––– S Qg Total Gate Charge ––– 56 84 nC Qgs Gate-to-Source Charge ––– 13 ––– Qgd Gate-to-Drain ("Miller") Charge ––– 16 ––– Qsync Total Gate Charge Sync. (Qg - Qgd) ––– 40 ––– RG(int) Internal Gate Resistance ––– 0.55 ––– Ω td(on) Turn-On Delay Time ––– 16 ––– ns tr Rise Time ––– 110 ––– td(off) Turn-Off Delay Time ––– 43 ––– tf Fall Time ––– 96 ––– Ciss Input Capacitance ––– 3070 ––– pF Coss Output Capacitance ––– 280 ––– Crss Reverse Transfer Capacitance ––– 130 ––– Coss eff. (ER) Effective Output Capacitance (Energy Related) j ––– 380 ––– Coss eff. (TR) Effective Output Capacitance (Time Related) h ––– 610 ––– Diode Characteristics Symbol Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 80 c A (Body Diode) ISM Pulsed Source Current ––– ––– 310 (Body Diode) d VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 33 50 ns TJ = 25°C VR = 64V, ––– 39 59 TJ = 125°C IF = 46A Qrr Reverse Recovery Charge ––– 32 48 nC TJ = 25°C di/dt = 100A/µs g ––– 47 71 TJ = 125°C IRRM Reverse Recovery Current ––– 1.9 ––– A TJ = 25°C ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Conditions VDS = 50V, ID = 46A ID = 46A VGS = 20V VGS = -20V MOSFET symbol showing the VDS = 38V Conditions VGS = 10V g VGS = 0V VDS = 50V ƒ = 1.0MHz VGS = 0V, VDS = 0V to 60V j VGS = 0V, VDS = 0V to 60V h TJ = 25°C, IS = 46A, VGS = 0V g integral reverse p-n junction diode. Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 5mA d VGS = 10V, ID = 46A g VDS = VGS, ID = 100µA VDS = 75V, VGS = 0V VDS = 60V, VGS = 0V, TJ = 125°C ID = 46A RG = 6.8 Ω VGS = 10V g VDD = 49V ID = 46A, VDS =0V, VGS = 10V |
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