2SA1235A datasheet(2/5 Pages) ISAHAYA

Nome de Peças	2SA1235A

Descrição Electrónicos	FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(Super mini type)

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Fabricante Electrônico	ISAHAYA [Isahaya Electronics Corporation]

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< SMALL-SIGNAL TRANSISTOR >

2SA1235A

2SA1602A

2SA1993

FOR LOW FREQUENCY AMPLIFY APPLICATION

SILICON

PNP EPITAXIAL TYPE(Super mini type)

MAXIMUM RATINGS（Ｔａ＝２５℃）

Ratings

Symbol

Parameter

2SA1235A

2SA1602A

2SA1993

Unit

Ｖ

ＣＢＯ

Collector to Base voltage

-60

-50

V

Ｖ

ＥＢＯ

Emitter to Base voltage

-6

V

Ｖ

ＣＥＯ

Collector to Emitter

voltage

-50

V

Ｉ

Ｃ

Collector current

200

mA

Ｐ

Ｃ

Collector dissipation

200

450

mW

Ｔｊ

Junction temperature

+150

℃

Ｔｓｔｇ

Storage temperature

-55～+150

℃

ELECTRICAL CHARACTERISTICS

（Ta=25℃）

Limits

Parame

ter

Symbol

Test conditions

Min

Typ

Max

Unit

Ｖ

（ＢＲ）ＣＥＯ

C to E break down voltage

I

C=-100μA，RBE=∞

-50

V

2SA1993

V

CB=-50V，I E =0

-0.1

Ｉ

ＣＢＯ

Collector cut off current

Emitter cut off current

2SA1235A,2SA1602A

V

CB=-60V，I E =0

-0.1

μA

Ｉ

EＢＯ

DC forward current gain

V

EB=-6V，I C =0

-0.1

μA

ｈ

ＦＥ*

DC forward current gain

V

CE=-6V，I C =-1mA

150

500

－

2SA1993

50

－

ｈ

ＦＥ

C to E Saturation Vlotage

2SA1235A,2SA1602A

V

CE=-6V，I C =-0.1mA

90

－

Ｖ

ＣＥ（ｓａｔ）

Gain bandwidth product

I

C =-100mA，I B =-10mA

-0.3

V

ｆ

Ｔ

Collector output capacitance

V

CE=-6V，I E =10mA

200

MHz

Cob

C to E break down voltage

V

CB=-6V，I E =0,f=1MHz

4.0

pF

NF

Noise figure

V

CE=-6V，I E =0.3mA,f=100Hz,RG=10ｋΩ

20

dB

*：

It shows hFE classification in below table.

E

F

2SA1235A

2SA1602A

ｈFE

2SA1993

150～300

250～500

ISAHAYA ELECTRONICS CORPORATION

Nº de peça semelhante - 2SA1235A

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
List of Unclassifed Man...	2SA1235A	313Kb / 2P	PNP TRANSISTOR
Jinan Jing Heng Electro...	2SA1235A	1Mb / 5P	PNP Plastic-Encapsulate Transistors
TRANSYS Electronics Lim...	2SA1235A	69Kb / 1P	Plastic-Encapsulated Transistors
Nanjing International G...	2SA1235A	1Mb / 4P	SOT-23 Plastic-Encapsulate Transistors
Galaxy Semi-Conductor H...	2SA1235A	135Kb / 3P	Silicon Epitaxial Planar Transistor

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Descrição semelhante - 2SA1235A

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Isahaya Electronics Cor...	2SA1602	339Kb / 4P	FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE (SUPER MINI TYPE)
	2SA1603A	133Kb / 2P	FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(Super mini type)
	2SA1530A	442Kb / 4P	FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(Ultra super mini type)
	2SA1235	176Kb / 4P	FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(mini type)
	RT1A3906-T122	517Kb / 3P	FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(mini type)
	INA5002AC1	397Kb / 2P	FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE
	2SC5383	213Kb / 3P	FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE(Ultra super mini type)
List of Unclassifed Man...	2SA1530A	92Kb / 3P	FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE
Isahaya Electronics Cor...	INA6005AP1	118Kb / 2P	FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE
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