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STE180NE10 Folha de dados(PDF) 3 Page - STMicroelectronics |
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STE180NE10 Folha de dados(HTML) 3 Page - STMicroelectronics |
3 / 12 page STE180NE10 Electrical ratings 3/12 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 100 V VDGR Drain-gate voltage (RGS = 20kΩ)100 V VGS Gate-source voltage ± 20 V ID Drain current (continuous) at TC = 25°C 180 A ID Drain current (continuous) at TC = 100°C 119 A IDM (1) 1. Pulse width limited by safe operating area Drain current (pulsed) 360 A PTOT Total dissipation at TC = 25°C 360 W Derating factor 2.88 W/°C VISO Insulation withstand voltage (AC-RMS) 2500 V Tj Tstg Operating junction temperature storage temperature -55 to 150 °C Table 2. Thermal data Rthj-case Thermal resistance junction-case max 0.37 °C/W Table 3. Avalanche characteristics Symbol Parameter Max value Unit IAR Avalanche Current, Repetitive or Not- Repetitive (pulse width limited by Tj max) 60 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 25 V) 720 mJ |
Nº de peça semelhante - STE180NE10_07 |
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Descrição semelhante - STE180NE10_07 |
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