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STB10NB50 Folha de dados(PDF) 1 Page - STMicroelectronics

Nome de Peças STB10NB50
Descrição Electrónicos  N - CHANNEL 500V - 0.55ohm - 10.6A - D2PAK PowerMESH] MOSFET
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB10NB50 Folha de dados(HTML) 1 Page - STMicroelectronics

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STB10NB50
N - CHANNEL 500V - 0.55
Ω - 10.6A - D2PAK
PowerMESH
™ MOSFET
s
TYPICAL RDS(on) = 0.55
Ω
s
EXTREMELY HIGH dv/dt CAPABILITY
s
100% AVALANCHE TESTED
s
VERY LOW INTRINSIC CAPACITANCES
s
GATE CHARGE MINIMIZED
s
ADD SUFFIX ”T4” FOR ORDERING IN TAPE
& REEL
DESCRIPTION
Using the latest high voltage MESH OVERLAY
™
process, STMicroelectronics has designed an
advanced family
of
power MOSFETs
with
outstanding performances.
The
new
patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITCH MODE POWER SUPPLIES (SMPS)
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
®
INTERNAL SCHEMATIC DIAGRAM
March 1999
1
3
ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS =0)
500
V
VDGR
Drain- gat e Voltage (RGS =20 k
Ω)
500
V
VGS
G ate-source Voltage
± 30
V
ID
Drain Current (cont inuous) at Tc =25
o C10.6
A
ID
Drain Current (cont inuous) at Tc = 100
oC6.4
A
IDM(
•)
Drain Current (pulsed)
42.4
A
Ptot
T otal Dissipation at Tc =25
oC135
W
Derating F act or
1.08
W /
oC
dv/dt (1)
Peak Diode Recovery voltage slope
4.5
V/ns
Tstg
Storage T emperature
-65 to 150
oC
Tj
Max. Operating Junction T emperature
150
oC
(
•) Pulse width limited by safe operating area
( 1)ISD
≤ 10.6A, di/dt ≤ 200 Α/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX
TYPE
VDSS
RDS(on)
ID
ST B10NB50
500 V
< 0.60
Ω
10.6 A
D
2PAK
TO-263
1/8


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