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STB4NC50 Folha de dados(PDF) 3 Page - STMicroelectronics |
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STB4NC50 Folha de dados(HTML) 3 Page - STMicroelectronics |
3 / 8 page 3/8 STB4NC50 Thermal Impedance ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) Turn-on Delay Time VDD = 300V, ID = 2 A RG = 4.7Ω VGS = 10V (see test circuit, Figure 3) 10 ns tr Rise Time 13 ns Qg Total Gate Charge VDD = 400V, ID = 4.2A, VGS = 10V 12.5 17 nC Qgs Gate-Source Charge 2.7 nC Qgd Gate-Drain Charge 6.1 nC Symbol Parameter Test Conditions Min. Typ. Max. Unit tr(Voff) Off-voltage Rise Time VDD = 400V, ID = 4 A, RG =4.7Ω, VGS = 10V (see test circuit, Figure 5) 15 ns tf Fall Time 13 ns tc Cross-over Time 20 ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD Source-drain Current 4 A ISDM (2) Source-drain Current (pulsed) 16 A VSD (1) Forward On Voltage ISD = 4 A, VGS = 0 1.6 V trr Reverse Recovery Time ISD = 4 A, di/dt = 100A/µs, VDD = 100V, Tj = 150°C (see test circuit, Figure 5) 400 ns Qrr Reverse Recovery Charge 1.64 µC IRRM Reverse Recovery Current 8.2 A Safe Operating Area |
Nº de peça semelhante - STB4NC50 |
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Descrição semelhante - STB4NC50 |
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