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STB4NC60 Folha de dados(PDF) 2 Page - STMicroelectronics

Nome de Peças STB4NC60
Descrição Electrónicos  N-CHANNEL 600V - 1.8ohm - 4.2A D2PAK PowerMesh?줚I MOSFET
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB4NC60 Folha de dados(HTML) 2 Page - STMicroelectronics

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THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
ON (1)
DYNAMIC
Rthj-case
Thermal Resistance Junction-case Max
1.25
°C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
°C/W
Tl
Maximum Lead Temperature For Soldering Purpose
300
°C
Symbol
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
4.2
A
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
250
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
600
V
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
1µA
VDS = Max Rating, TC = 125 °C
50
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ±30V
±100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250µA
23
4
V
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 1.5 A
1.8
2.2
Ω
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs (1)
Forward Transconductance
VDS > ID(on) x RDS(on)max,
ID =2A
3.7
S
Ciss
Input Capacitance
VDS = 25V, f = 1 MHz, VGS = 0
475
pF
Coss
Output Capacitance
72
pF
Crss
Reverse Transfer
Capacitance
10
pF


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