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Os motores de busca de Datasheet de Componentes eletrônicos |
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Os motores de busca de Datasheet de Componentes eletrônicos |
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STB55NE06 Folha de dados(PDF) 1 Page - STMicroelectronics |
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STB55NE06 Folha de dados(HTML) 1 Page - STMicroelectronics |
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1 / 8 page  STB55NE06 N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ™ ” POWER MOSFET s TYPICAL RDS(on) = 0.019 Ω s EXCEPTIONAL dv/dt CAPABILITY s 100% AVALANCHE TESTED s LOW GATE CHARGE 100 oC s HIGH dv/dt CAPABILITY s APPLICATION ORIENTED CHARACTERIZATION s FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalance characteristics and less critical alignment steps therefore a remark- able manufacturing reproducibility. APPLICATIONS s DC MOTOR CONTROL s DC-DC & DC-AC CONVERTERS s SYNCHRONOUS RECTIFICATION INTERNAL SCHEMATIC DIAGRAM December 1997 1 3 D 2PAK TO-263 (suffix ”T4”) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Uni t VDS Drain-source Volt age (VGS =0) 60 V VDGR Drain- gate Volt age (RGS =20 k Ω) 60 V VGS Gat e-source Voltage ± 20 V ID Drain Current (continuous) at Tc =25 oC55 A ID Drain Current (continuous) at Tc =100 oC39 A IDM( •) Drain Current (pulsed) 220 A Ptot Tot al Dissipation at Tc =25 oC 130 W Derating F act or 0. 96 W/ oC dv/dt Peak Diode Recovery voltage slope 7 V/ ns Tstg Storage Temperature -65 to 175 oC Tj Max. O perat ing Junction Temperature 175 oC ( •) Pulse width limited by safe operating area (1)ISD ≤ 55 A,di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX TYPE VDSS RDS(on) ID ST B55NE06 60 V < 0.022 Ω 55 A 1/8 |
Nº de peça semelhante - STB55NE06 |
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Descrição semelhante - STB55NE06 |
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