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STB5NB80 Folha de dados(PDF) 3 Page - STMicroelectronics |
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STB5NB80 Folha de dados(HTML) 3 Page - STMicroelectronics |
3 / 8 page ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbo l Parameter Test Con ditions Min. T yp. Max. Unit td(on) tr Turn-on delay Time Rise Time VDD = 400 V ID =3 A RG =4.7 Ω VGS =10 V (see test circuit, figure 3) 18 9 ns ns Qg Q gs Qgd Tot al Gate Charge Gat e-Source Charge Gat e-Drain Charge VDD = 480 V ID =5.6 A VGS =10 V 30 9 14 42 nC nC nC SWITCHING OFF Symbo l Parameter Test Con ditions Min. T yp. Max. Unit tr(Voff) tf tc Off -volt age Rise Time Fall Time Cross-over Time VDD = 640 V ID =5.6 A RG =4.7 Ω VGS =10 V (see test circuit, figure 5) 14 14 21 ns ns ns SOURCE DRAIN DIODE Symbo l Parameter Test Con ditions Min. T yp. Max. Unit ISD ISDM ( •) Source-drain Current Source-drain Current (pulsed) 5 20 A A VSD ( ∗) Forward On Volt age ISD =5 A VGS =0 1. 6 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD =5.6 A di/dt = 100 A/ µs VDD = 100 V Tj =150 oC (see test circuit, figure 5) 700 5 14 ns µC A ( ∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ( •) Pulse width limited by safe operating area Safe Operating Area Thermal Impedance STB5NB80 3/8 |
Nº de peça semelhante - STB5NB80 |
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Descrição semelhante - STB5NB80 |
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