BF421-AP datasheet(2/5 Pages) STMICROELECTRONICS

Nome de Peças	BF421-AP

Descrição Electrónicos	SMALL SIGNAL PNP TRANSISTOR

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THERMAL DATA

Rthj-amb

•

Rthj-Case

•

Thermal Resistance Junction-Ambient

Max

Thermal Resistance Junction-Case

Max

150

50

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICBO

Collector Cut-off

Current (IE = 0)

VCB = -200 V

TC = 150

oC

VCB = -300 V

-10

-100

nA

µA

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = -5 V

-50

nA

V(BR)CEO

∗ Collector-Emitter

Breakdown Voltage

(IB = 0)

IC = -10 mA

-300

V

V(BR)CBO

Collector-Base

Breakdown Voltage

(IE = 0)

IC = -10

µA

-300

V

V(BR)EBO

Emitter-Base

Breakdown Voltage

(IC = 0)

IE = -100

µA

-5

V

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = -30 mA

IB = -5 mA

-0.6

V

VBE(sat)

∗ Base-Emitter

Saturation Voltage

IC = -30 mA

IB = -5 mA

-1.2

V

hFE

∗

DC Current Gain

IC = -25 mA

VCE = -20 V

50

fT

Transition Frequency

IC = -10 mA VCE = -10 V f =100MHz

60

MHz

CRE

Reverse Capacitance

IE = 0

VCB = -30 V f = 1MHz

1.6

pF

∗ Pulsed: Pulse duration ≤ 300 µs, duty cycle ≤ 2 %

BF421

2/5

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