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STD50NH02L Folha de dados(PDF) 3 Page - STMicroelectronics

Nome de Peças STD50NH02L
Descrição Electrónicos  N-CHANNEL 24V - 0.0085 ohm - 50A DPAK/IPAK STripFET??III POWER MOSFET
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STD50NH02L Folha de dados(HTML) 3 Page - STMicroelectronics

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STD50NH02L
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(1) Garanted when external Rg=4.7
Ω and tf < tfmax.
(4) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area
(5) Qoss = Coss*
∆ Vin , Coss = Cgd + Cds . See Appendix A
(3) Starting Tj = 25 oC, ID = 25A, VDD = 15V
.
.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 10 V
ID = 25 A
RG = 4.7 Ω
VGS = 10 V
(Resistive Load, Figure 3)
10
130
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD= 10 V ID= 50 A VGS= 10 V
24
5
3.4
32
nC
nC
nC
Qoss(5)
Output Charge
VDS= 16 V
VGS= 0 V
9.4
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(off)
tf
Turn-off Delay Time
Fall Time
VDD = 10 V
ID = 25 A
RG = 4.7Ω,
VGS = 10 V
(Resistive Load, Figure 3)
27
16
21.6
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM
Source-drain Current
Source-drain Current (pulsed)
50
200
A
A
VSD (4)
Forward On Voltage
ISD = 25 A
VGS = 0
1.3
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 50 A
di/dt = 100A/µs
VDD = 20 V
Tj = 150°C
(see test circuit, Figure 5)
36
36
2
ns
nC
A
ELECTRICAL CHARACTERISTICS (continued)
Safe Operating Area
Thermal Impedance


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