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STD9N10 Folha de dados(PDF) 2 Page - STMicroelectronics

Nome de Peças STD9N10
Descrição Electrónicos  N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STD9N10 Folha de dados(HTML) 2 Page - STMicroelectronics

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THERMAL DATA
Rthj-ca se
Rthj- amb
Rthc-si nk
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead T emperature For Soldering Purpose
3.33
100
1.5
275
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symb ol
Parameter
Max Valu e
Uni t
IAR
Avalanche Current , Repet itive or Not -Repetitive
(pulse widt h limited by Tj max,
δ <1%)
9A
EAS
Single Pulse Avalanche Energy
(starting Tj =25
oC, I
D =IAR,VDD =25 V )
30
mJ
EAR
Repetit ive Avalanche Energy
(pulse widt h limited by Tj max,
δ <1%)
7mJ
IAR
Avalanche Current , Repet itive or Not -Repetitive
(Tc =100
oC, pulse width limited by Tj max, δ <1%)
6A
ELECTRICAL CHARACTERISTICS (Tcase =25
oC unless otherwise specified)
OFF
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
V(BR)DSS
Drain-source
Breakdown Volt age
ID = 250
µAVGS = 0
100
V
IDSS
Zero Gat e Voltage
Drain Current (VGS =0)
VDS =Max Rating
VDS =Max Rating x0.8
Tc = 125
oC
250
1000
µA
µA
IGSS
Gate-body Leakage
Current (VDS =0)
VGS =
± 20 V
± 100
nA
ON (
∗)
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
VGS(th)
Gate T hreshold Voltage VDS =VGS
ID =250
µA2
3
4
V
RDS( on)
St atic Drain-source On
Resistance
VGS = 10V
ID =4.5 A
VGS = 10V
ID =4.5 A
Tc =100
oC
0. 23
0.27
0.54
ID(o n)
On Stat e Drain Current
VDS >ID(on) xRDS(on)max
VGS =10 V
9A
DYNAMIC
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
gfs (
∗)Forward
Transconductance
VDS >ID(on) xRDS(on)max
ID =4.5 A
2
4
S
Ciss
Coss
Crss
Input Capacitance
Output Capacit ance
Reverse Transfer
Capacitance
VDS = 25V
f = 1MHz
VGS = 0
330
90
25
450
120
40
pF
pF
pF
STD9N10
2/10


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