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STGB10NB37LZ Folha de dados(PDF) 2 Page - STMicroelectronics

Nome de Peças STGB10NB37LZ
Descrição Electrónicos  N-CHANNEL CLAMPED 10A D2PAK INTERNALLY CLAMPED PowerMESH IGBT
Download  8 Pages
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGB10NB37LZ Folha de dados(HTML) 2 Page - STMicroelectronics

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THERMAL DATA
Rthj-case
Rthj-amb
Rthc-sink
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
T yp
1.2
62. 5
0.2
oC/W
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tj =25
oC unless otherwise specified)
OFF
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
BV(CES)
Clamped Voltage
IC = 2 mA
VGE =0
Tj = - 40to150
oC
375
400
425
V
BV(ECR)
Emitter Collector
Break-down Voltage
IC =75 mA
V GE =0
Tj = - 40to150
oC
18
V
BVGE
Gat e Emitter
Break-down Voltage
IC =
± 2mA
Τj = - 40to150 oC
12
16
V
ICES
Collector cut-of f
Current (VGE = 0)
VCE =15 V
VGE =0
Tj =150
oC
VCE = 200 V
VGE =0
Tj = 150
o C
10
100
µA
µA
IGES
Gat e-Emitter Leakage
Current (VCE = 0)
VGE =
± 10 V
VCE =0
± 0.7
mA
RGE
Gat e Emitter Resistance
20
K
Ω
ON (
∗)
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
VGE(th)
Gat e Threshold
Voltage
VCE =VGE
IC = 250
µA
Tj = - 40to150
oC
0. 6
2. 4
V
VCE(SAT )
Collector-Emitt er
Sat uration Voltage
VGE =4.5 V
IC =10 A Tj =25
oC
VGE =4. 5 V
IC =10 A
Tj =- 40
oC
1.2
1.3
1. 8
V
V
IC
Collector Current
VGE =4.5 V
VCE =9 V
20
A
DYNAMIC
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
gfs
Forward
Transconductance
VCE =25 V
I C = 10 A
10
18
S
Cies
Coes
Cres
Input Capacitance
Out put Capacitance
Reverse Transfer
Capacitance
VCE = 25V
f = 1MHz
VGE = 0
1250
103
18
1700
140
25
pF
pF
pF
QG
Gat e Charge
VCE = 320 V
IC =10 A
VGE =5 V
28
nC
STGB10NB37LZ
2/8


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