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STGB7NB40LZ Folha de dados(PDF) 1 Page - STMicroelectronics

Nome de Peças STGB7NB40LZ
Descrição Electrónicos  N-CHANNEL CLAMPED 14A - D2PAK INTERNALLY CLAMPED PowerMESH??IGBT
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGB7NB40LZ Folha de dados(HTML) 1 Page - STMicroelectronics

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March 2003
STGB7NB40LZ
N-CHANNEL CLAMPED 14A - D2PAK
INTERNALLY CLAMPED PowerMESH™ IGBT
s
POLYSILICON GATE VOLTAGE DRIVEN
s
LOW THRESHOLD VOLTAGE
s
LOW ON-VOLTAGE DROP
s
LOW GATE CHARGE
s
HIGH CURRENT CAPABILITY
s
HIGH VOLTAGE CLAMPING FEATURE
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH™ IGBTs, with outstanding
performances. The built in collector-gate zener
exhibits a very precise active clamping while the
gate-emitter zener supplies an ESD protection.
APPLICATIONS
s
AUTOMOTIVE IGNITION
ABSOLUTE MAXIMUM RATINGS
TYPE
VCES
VCE(sat)
IC
STGB7NB40LZ
CLAMPED
< 1.50 V14 A
Symbol
Parameter
Value
Unit
VCES
Collector-Emitter Voltage (VGS =0)
CLAMPED
V
VECR
Reverse Battery Protection
20
V
VGE
Gate-Emitter Voltage
CLAMPED
V
IC
Collector Current (continuous) at 100°C
14
A
RG
Minimum External Gate Resistor
500
Ω
PTOT
Total Dissipation at TC = 25°C
100
W
Derating Factor
0.66
W/°C
ECL
Single Pulse Collector to Emitter Avalanche Energy
IC=13 A ;Tj= 150°C (see fig.1-2)
130
mJ
EECAV
Reverse Avalanche Energy
IC = 7 A ;f= 100 Hz ; Tc = 25°C
10
mJ
Tstg
Storage Temperature
–55 to 175
°C
Tj
Operating Junction Temperature
D2PAK
1
3
INTERNAL SCHEMATIC DIAGRAM


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