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STK12N05L Folha de dados(PDF) 1 Page - STMicroelectronics

Nome de Peças STK12N05L
Descrição Electrónicos  N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STK12N05L Folha de dados(HTML) 1 Page - STMicroelectronics

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STK12N05L
STK12N06L
N - CHANNEL ENHANCEMENT MODE
LOW THRESHOLD POWER MOS TRANSISTOR
s
TYPICAL RDS(on) = 0.115
Ω
s
AVALANCHE RUGGED TECHNOLOGY
s
100% AVALANCHE TESTED
s
REPETITIVE AVALANCHE DATA AT 100
oC
s
LOW GATE CHARGE
s
LOGIC LEVEL COMPATIBLE INPUT
s
175
oC OPERATING TEMPERATURE FOR
STANDARD PACKAGE
s
APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SOLENOID AND RELAY DRIVERS
s
REGULATORS
s
DC-DC & DC-AC CONVERTERS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
INTERNAL SCHEMATIC DIAGRAM
TYPE
VDSS
R DS(on)
ID
STK12N05L
STK12N06L
50 V
60 V
<0. 15
Ω
<0. 15
Ω
12 A
12 A
1
2
3
SOT-82
SOT-194
(option)
November 1996
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Val ue
Unit
STK12N05L
STK12N06L
VDS
Drain-source Voltage (VGS =0)
50
60
V
VDG R
Drain- gate Voltage (RGS =20 k
Ω)50
60
V
VGS
Gate-source Voltage
± 15
V
ID
Drain Current (cont inuous) at T c =25
oC12
A
ID
Drain Current (cont inuous) at T c =100
oC8
A
IDM(
•)
Drain Current (pulsed)
48
A
Ptot
Total Dissipation at Tc =25
oC50
W
Derating Factor
0.33
W/
oC
Tstg
St orage Temperat ure
-65 to 175
oC
Tj
Max. Operat ing Junction Temperature
175
oC
(
•) Pulse width limited by safe operating area
1
2
3
1/10


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