STG6684QTR datasheet(8/24 Pages) STMICROELECTRONICS

Nome de Peças	STG6684QTR

Descrição Electrónicos	High isolation dual SPDT analog switch

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Fabricante Electrônico	STMICROELECTRONICS [STMicroelectronics]

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Electrical characteristics

STG6684

8/24

RFLAT,

Tn

ON resistance

flatness for Tn

channels(2)

4.3

VS = 0 to VCC

IS = 100 mA

0.45

0.50

0.55

Ω

3.6

0.45

0.50

0.55

3.0

0.50

0.55

0.60

2.7

0.55

0.60

0.70

1.8

1.10

1.70

2.00

RFLAT,

Sn

ON resistance

flatness for Sn

channels(2)

4.3

VS = 0 to VCC

IS = 100 mA

0.15

0.20

Ω

3.6

0.15

0.20

3.0

0.15

0.20

2.7

0.15

0.20

1.8

0.35

0.55

0.66

IOFF

OFF state

leakage current

(Tn), (Sn), (Dn)

4.3

VS = 0.3 or 4 V

±0.1

±1

μA

ISEL

SEL leakage

current

0

−4.3

VSEL = 0 to 4.3 V

±0.05

±1

μA

ICC

Quiescent

supply current

1.65

−4.3

VSEL =VCC or

GND

±0.05

±0.2

μA

ICCLV

Quiescent

supply current

low voltage

driving

4.3

VSEL = 1.65 V

±37

±50

±100

μA

VSEL = 1.80 V

±33

±40

±50

VSEL = 2.60 V

±12

±20

±30

1.

ΔRON =RON(max) -RON(min).

2.

Flatness is defined as the difference between the maximum and minimum value of on-resistance as

measured over the specified analog signal ranges.

Table 6.

DC specifications

Symbol

Parameter

VCC

(V)

Test condition

Value

Unit

TA =25°C

-40 to 85 °C

Min

Typ

Max

Min

Max

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