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STG6684QTR Folha de dados(PDF) 8 Page - STMicroelectronics |
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STG6684QTR Folha de dados(HTML) 8 Page - STMicroelectronics |
8 / 24 page Electrical characteristics STG6684 8/24 RFLAT, Tn ON resistance flatness for Tn channels(2) 4.3 VS = 0 to VCC IS = 100 mA 0.45 0.50 0.55 Ω 3.6 0.45 0.50 0.55 3.0 0.50 0.55 0.60 2.7 0.55 0.60 0.70 1.8 1.10 1.70 2.00 RFLAT, Sn ON resistance flatness for Sn channels(2) 4.3 VS = 0 to VCC IS = 100 mA 0.15 0.20 0.20 Ω 3.6 0.15 0.20 0.20 3.0 0.15 0.20 0.20 2.7 0.15 0.20 0.20 1.8 0.35 0.55 0.66 IOFF OFF state leakage current (Tn), (Sn), (Dn) 4.3 VS = 0.3 or 4 V ±0.1 ±1 μA ISEL SEL leakage current 0 −4.3 VSEL = 0 to 4.3 V ±0.05 ±1 μA ICC Quiescent supply current 1.65 −4.3 VSEL =VCC or GND ±0.05 ±0.2 μA ICCLV Quiescent supply current low voltage driving 4.3 VSEL = 1.65 V ±37 ±50 ±100 μA VSEL = 1.80 V ±33 ±40 ±50 VSEL = 2.60 V ±12 ±20 ±30 1. ΔRON =RON(max) -RON(min). 2. Flatness is defined as the difference between the maximum and minimum value of on-resistance as measured over the specified analog signal ranges. Table 6. DC specifications Symbol Parameter VCC (V) Test condition Value Unit TA =25°C -40 to 85 °C Min Typ Max Min Max |
Nº de peça semelhante - STG6684QTR |
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Descrição semelhante - STG6684QTR |
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