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SI2351DS Folha de dados(PDF) 3 Page - Vishay Siliconix |
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SI2351DS Folha de dados(HTML) 3 Page - Vishay Siliconix |
3 / 7 page Document Number: 73702 S-80642-Rev. C, 24-Mar-08 www.vishay.com 3 Vishay Siliconix Si2351DS TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current and Gate Voltage Gate Charge 0 2 4 6 8 10 012 34 VGS = 5 thru 3 V VGS = 2 V VDS - Drain-to-Source Voltage (V) VGS = 2.5 V VGS = 1.5 V 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0246 8 10 ID - Drain Current (A) VGS = 4.5 V VGS = 2.5 V 0 1 2 3 4 5 012 3 4 ID = 3.0 A Qg - Total Gate Charge (nC) VDS = 10 V VDS = 16 V Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5 VGS - Gate-to-Source Voltage (V) TC = 25 °C TC = 125 °C TC = - 55 °C 0 100 200 300 400 500 04 8 12 16 20 Crss Coss Ciss VDS - Drain-to-Source Voltage (V) 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) VGS = 4.5 V, ID = 2.4 A VGS = 2.5 V, ID = 1.8 A |
Nº de peça semelhante - SI2351DS |
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Descrição semelhante - SI2351DS |
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