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STP35NF10 Folha de dados(PDF) 3 Page - STMicroelectronics |
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STP35NF10 Folha de dados(HTML) 3 Page - STMicroelectronics |
3 / 10 page 3/10 STP35NF10 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) Turn-on Delay Time VDD =50V, ID = 17.5 A RG = 4.7Ω VGS =10V (see test circuit, Figure 3) 17 ns tr Rise Time 60 ns Qg Total Gate Charge VDD =80V, ID =35A,VGS = 10V 55 nC Qgs Gate-Source Charge 12 nC Qgd Gate-Drain Charge 20 nC Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) tf Turn-off-Delay Time Fall Time VDD = 50V, ID =17.5A, RG =4.7Ω, VGS = 10V (see test circuit, Figure 3) 60 15 ns ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD Source-drain Current 40 A ISDM (2) Source-drain Current (pulsed) 160 A VSD (1) Forward On Voltage ISD =35A,VGS =0 1.5 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 35 A, di/dt = 100A/µs, VDD =25V, Tj = 150°C (see test circuit, Figure 5) 160 720 9 ns nC A Thermal Impedence Safe Operating Area |
Nº de peça semelhante - STP35NF10 |
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Descrição semelhante - STP35NF10 |
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