Os motores de busca de Datasheet de Componentes eletrônicos
  Portuguese  ▼
ALLDATASHEETPT.COM

X  

Preview PDF HTML

STP38N06 Folha de dados(PDF) 2 Page - STMicroelectronics

Nome de Peças STP38N06
Descrição Electrónicos  N - CHANNEL ENHANCEMENT MODE ?쓀LTRA HIGH DENSITY??POWER MOS TRANSISTOR
Download  11 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP38N06 Folha de dados(HTML) 2 Page - STMicroelectronics

  STP38N06 Datasheet HTML 1Page - STMicroelectronics STP38N06 Datasheet HTML 2Page - STMicroelectronics STP38N06 Datasheet HTML 3Page - STMicroelectronics STP38N06 Datasheet HTML 4Page - STMicroelectronics STP38N06 Datasheet HTML 5Page - STMicroelectronics STP38N06 Datasheet HTML 6Page - STMicroelectronics STP38N06 Datasheet HTML 7Page - STMicroelectronics STP38N06 Datasheet HTML 8Page - STMicroelectronics STP38N06 Datasheet HTML 9Page - STMicroelectronics Next Button
Zoom Inzoom in Zoom Outzoom out
 2 / 11 page
background image
THERMAL DATA
Rthj-ca se
Rthj- amb
Rthc-si nk
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead T emperature For Soldering Purpose
1.66
62.5
0.5
300
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symb ol
Parameter
Max Valu e
Uni t
IAR
Avalanche Current , Repet itive or Not -Repetitive
(pulse widt h limited by Tj max,
δ <1%)
38
A
EAS
Single Pulse Avalanche Energy
(starting Tj =25
oC, I
D =IAR,VDD =25 V )
300
mJ
EAR
Repetit ive Avalanche Energy
(pulse widt h limited by Tj max,
δ <1%)
75
mJ
IAR
Avalanche Current , Repet itive or Not -Repetitive
(Tc =100
oC, pulse width limited by Tj max, δ <1%)
26
A
ELECTRICAL CHARACTERISTICS (Tcase =25
oC unless otherwise specified)
OFF
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
V(BR)DSS
Drain-source
Breakdown Volt age
ID = 250
µAVGS =0
60
V
IDSS
Zero Gat e Voltage
Drain Current (VGS =0)
VDS =Max Rating
VDS =Max Rating x0.8
Tc = 125
oC
250
1000
µA
µA
IGSS
Gate-body Leakage
Current (VDS =0)
VGS =
± 20 V
± 100
nA
ON (
∗)
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
VGS(th)
Gate T hreshold Voltage VDS =VGS
ID =250
µA2
3
4
V
RDS( on)
St atic Drain-source On
Resistance
VGS = 10V
ID =19 A
VGS = 10V
ID =19 A
Tc =100
oC
0.026
0.03
0.06
Ω
Ω
ID(o n)
On Stat e Drain Current
VDS >ID(on) xRDS(on)max
VGS =10 V
38
A
DYNAMIC
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
gfs (
∗)Forward
Transconductance
VDS >ID(on) xRDS(on)max
ID =19 A
14
19
S
Ciss
Coss
Crss
Input Capacitance
Output Capacit ance
Reverse Transfer
Capacitance
VDS = 25V
f = 1MHz
VGS = 0
2000
350
80
2800
450
120
pF
pF
pF
STP38N06
2/11


Nº de peça semelhante - STP38N06

Fabricante ElectrônicoNome de PeçasFolha de dadosDescrição Electrónicos
logo
STMicroelectronics		 STP38N65M5 STMICROELECTRONICS-STP38N65M5 Datasheet
1Mb / 22P		    N-channel 650 V, 0.073, 30 A MDmesh V Power MOSFET
logo
Inchange Semiconductor ...		 STP38N65M5 ISC-STP38N65M5 Datasheet
320Kb / 2P		    isc N-Channel MOSFET Transistor
More results

Descrição semelhante - STP38N06

Fabricante ElectrônicoNome de PeçasFolha de dadosDescrição Electrónicos
logo
STMicroelectronics		 STP40N03L-20 STMICROELECTRONICS-STP40N03L-20 Datasheet
65Kb / 7P		    N - CHANNEL ENHANCEMENT MODE ?쓀LTRA HIGH DENSITY??POWER MOS TRANSISTOR
STD20N06 STMICROELECTRONICS-STD20N06 Datasheet
174Kb / 10P		    N - CHANNEL ENHANCEMENT MODE ?쓀LTRA HIGH DENSITY??POWER MOS TRANSISTOR
STP80N06-10 STMICROELECTRONICS-STP80N06-10 Datasheet
77Kb / 5P		    N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
STW80N06-10 STMICROELECTRONICS-STW80N06-10 Datasheet
57Kb / 5P		    N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
STP80N03L-06 STMICROELECTRONICS-STP80N03L-06 Datasheet
77Kb / 5P		    N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
STP80N05-09 STMICROELECTRONICS-STP80N05-09 Datasheet
114Kb / 9P		    N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
STH60N10 STMICROELECTRONICS-STH60N10 Datasheet
246Kb / 11P		    N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STP15N05L STMICROELECTRONICS-STP15N05L Datasheet
201Kb / 10P		    N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
November 1996
IRF630FI STMICROELECTRONICS-IRF630FI Datasheet
190Kb / 6P		    N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STP3N50XI STMICROELECTRONICS-STP3N50XI Datasheet
289Kb / 7P		    N-CHANNEL enhancement mode power mos transistor
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11


Folha de dados Download

Go To PDF Page


Ligação URL




Privacy Policy
ALLDATASHEETPT.COM
ALLDATASHEET é útil para você?  [ DONATE ] 

Sobre Alldatasheet   |   Publicidade   |   Contato conosco   |   Privacy Policy   |   roca de Link   |   Lista de Fabricantes
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com