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STB45NF06L Folha de dados(PDF) 3 Page - STMicroelectronics

Nome de Peças STB45NF06L
Descrição Electrónicos  N-CHANNEL 60V - 0.022ohm - 38A TO-220 / D2PAK STripFET??II POWER MOSFET
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB45NF06L Folha de dados(HTML) 3 Page - STMicroelectronics

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STP45NF06L - STB45NF06L
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on Delay Time
VDD =30V, ID =19A
RG = 4.7Ω VGS =10V
(see test circuit, Figure 3)
30
ns
tr
Rise Time
105
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD =48V, ID = 38A,
VGS =5V
23
7
10
31
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(off)
tf
Turn-off-Delay Time
Fall Time
VDD = 30V, ID =19A,
RG =4.7Ω, VGS = 10V
(see test circuit, Figure 3)
65
25
ns
ns
td(off)
Off-voltage Rise Time
Vclamp =48V, ID =38A
RG =4.7Ω, VGS = 10V
50
ns
tf
Fall Time
(see test circuit, Figure 5)
55
ns
tc
Cross-over Time
85
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain Current
38
A
ISDM (2)
Source-drain Current (pulsed)
152
A
VSD (1)
Forward On Voltage
ISD = 38A, VGS =0
1.5
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 38A, di/dt = 100A/µs,
VDD =100V, Tj =150°C
(see test circuit, Figure 5)
70
110
4
ns
nC
A
Thermal Impedence
Safe Operating Area


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