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STP55NE06LFP Folha de dados(PDF) 1 Page - STMicroelectronics

Nome de Peças STP55NE06LFP
Descrição Electrónicos  N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
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STP55NE06L
STP55NE06LFP
N - CHANNEL ENHANCEMENT MODE
” SINGLE FEATURE SIZE
™ ” POWER MOSFET
s
TYPICAL RDS(on) = 0.018
s
EXCEPTIONAL dV/dt CAPABILTY
s
100% AVALANCHE TESTED
s
LOW GATE CHARGE 100
oC
s
HIGH dV/dt CAPABILITY
s
APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power Mosfet is the latest development of
SGS-THOMSON unique ”Single Feature Size”
process whereby a single body is implanted on a
strip layout structure. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s
DC MOTOR CONTROL
s
DC-DC & DC-AC CONVERTERS
s
SYNCHRONOUS RECTIFICATION
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Valu e
Uni t
STP55NE06L
ST P55NE06LFP
VDS
Drain-source Voltage (VGS =0)
60
V
VDGR
Drain- gate Volt age (RGS =20 k
Ω)
60
V
VGS
Gat e-source Volt age
± 15
V
ID
Drain Current (continuous) at Tc =25
oC55
28
A
ID
Drain Current (continuous) at Tc =100
oC39
20
A
IDM(
•)
Drain Current (pulsed)
220
220
A
Ptot
Tot al Dissipation at Tc =25
o C
130
35
W
Derating Factor
0. 86
0.23
W/
oC
VISO
Insulation W it hstand Voltage (DC)
2000
V
dV/ dt
Peak Diode Recovery voltage slope
7
V/ ns
Tstg
Storage Temperature
-65 to 175
oC
Tj
Max. O perat ing Junction Temperature
175
oC
(
•) Pulse width limited by safe operating area
(1)ISD
≤ 55 A,di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX
TYPE
VDSS
RDS(on)
ID
STP55NE06L
STP55NE06LF P
60 V
60 V
<0.022
<0.022
55 A
28 A
December 1997
TO-220
TO220FP
1
2
3
1
2
3
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