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IRF3205ZPBF Folha de dados(PDF) 1 Page - International Rectifier |
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IRF3205ZPBF Folha de dados(HTML) 1 Page - International Rectifier |
1 / 13 page 3/18/04 www.irf.com 1 AUTOMOTIVE MOSFET PD - 95129 HEXFET® Power MOSFET VDSS = 55V RDS(on) = 6.5mΩ ID = 75A Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on- resistance per silicon area. Additional features of this design are a 175°C junction operating tempera- ture, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. S D G Description l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax Features IRF3205ZPbF IRF3205ZSPbF IRF3205ZLPbF D2Pak IRF3205ZSPbF TO-220AB IRF3205ZPbF TO-262 IRF3205ZLPbF Absolute Maximum Ratings Parameter Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V A ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) IDM Pulsed Drain Current PD @TC = 25°C Power Dissipation W Linear Derating Factor W/°C VGS Gate-to-Source Voltage V EAS (Thermally limited) Single Pulse Avalanche Energyd mJ EAS (Tested ) Single Pulse Avalanche Energy Tested Value h IAR Avalanche Current à A EAR Repetitive Avalanche Energy g mJ TJ Operating Junction and TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw i Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case ––– 0.90 °C/W RθCS Case-to-Sink, Flat Greased Surface i 0.50 ––– RθJA Junction-to-Ambient i ––– 62 RθJA Junction-to-Ambient (PCB Mount) j ––– 40 250 180 See Fig.12a, 12b, 15, 16 170 1.1 ± 20 Max. 110 78 440 75 -55 to + 175 300 (1.6mm from case ) 10 lbf yin (1.1Nym) l Lead-Free |
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