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IRF6619TRPBF Folha de dados(PDF) 1 Page - International Rectifier

Nome de Peças IRF6619TRPBF
Descrição Electrónicos  DirectFET Power MOSFET
Download  10 Pages
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Fabricante Electrônico  IRF [International Rectifier]
Página de início  http://www.irf.com
Logo IRF - International Rectifier

IRF6619TRPBF Folha de dados(HTML) 1 Page - International Rectifier

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5/3/06
DirectFET
™ Power MOSFET ‚
Description
The IRF6619PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6619PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6619PbF has been optimized for parameters that are critical in synchronous buck
operating from 12 volt bus converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6619PbF offers particu-
larly low Rds(on) and high Cdv/dt immunity for synchronous FET applications.
DirectFET
™ ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)

Fig 1. Typical On-Resistance Vs. Gate Voltage
Typical values (unless otherwise specified)
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
SQ
SX
ST
MQ
MX
MT
Qg tot
Qgd
Qgs2
Qrr
Qoss Vgs(th)
38nC
13nC
3.5nC
18nC
22nC
2.0V
0
20
406080
100
QG Total Gate Charge (nC)
0
2
4
6
8
10
12
VDS= 16V
VDS= 10V
ID= 16A
MX
2.0
4.0
6.0
8.0
10.0
VGS, Gate-to-Source Voltage (V)
1.0
2.0
3.0
4.0
5.0
6.0
TJ = 25°C
TJ = 125°C
ID = 30A
VDSS
VGS
RDS(on)
RDS(on)
20V max ±20V max 1.65m
Ω@ 10V 2.2mΩ@ 4.5V
PD - 97084
l RoHS Compliant

l Lead-Free (Qualified up to 260°C Reflow)
l Application Specific MOSFETs
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses
l High Cdv/dt Immunity
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible

l Compatible with existing Surface Mount Techniques

IRF6619PbF
IRF6619TRPbF
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
„ TC measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Limited by TJmax, starting TJ = 25°C, L = 0.86mH, RG = 25Ω, IAS =
24A, VGS =10V. Part not recommended for use above this value.
Notes:
Absolute Maximum Ratings
Parameter
Units
VDS
Drain-to-Source Voltage
V
VGS
Gate-to-Source Voltage
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
e
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
e
A
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
fÃ(Package Limited)
IDM
Pulsed Drain Current
g
EAS (Thermally limited)
Single Pulse Avalanche Energy
h
mJ
IAR
Avalanche Current
Ãg
A
EAR
Repetitive Avalanche Energy
g
mJ
Max.
24
150
240
±20
20
30
240
See Fig. 14, 15, 17a, 17b,


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