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4N32TVM Folha de dados(PDF) 2 Page - Fairchild Semiconductor |
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4N32TVM Folha de dados(HTML) 2 Page - Fairchild Semiconductor |
2 / 10 page ©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com 4NXXM, H11B1M, TIL113M Rev. 1.0.0 2 Absolute Maximum Ratings (T A = 25°C Unless otherwise specified.) Symbol Parameter Value Units TOTAL DEVICE TSTG Storage Temperature -40 to +150 °C TOPR Operating Temperature -40 to +100 °C TSOL Lead Solder Temperature (Wave) 260 for 10 sec °C PD Total Device Power Dissipation @ TA = 25°C 250 mW Derate above 25°C 3.3 mW/°C EMITTER IF Continuous Forward Current 80 mA VR Reverse Voltage 3 V IF(pk) Forward Current – Peak (300µs, 2% Duty Cycle) 3.0 A PD LED Power Dissipation @ TA = 25°C 150 mW Derate above 25°C 2.0 mW/°C DETECTOR BVCEO Collector-Emitter Breakdown Voltage 30 V BVCBO Collector-Base Breakdown Voltage 30 V BVECO Emitter-Collector Breakdown Voltage 5 V PD Detector Power Dissipation @ TA = 25°C 150 mW Derate above 25°C 2.0 mW/°C IC Continuous Collector Current 150 mA |
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