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FDD8874 Folha de dados(PDF) 1 Page - Fairchild Semiconductor

Nome de Peças FDD8874
Descrição Electrónicos  N-Channel PowerTrench MOSFET 30V, 116A, 5.1m ohm
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Fabricante Electrônico  FAIRCHILD [Fairchild Semiconductor]
Página de início  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDD8874 Folha de dados(HTML) 1 Page - Fairchild Semiconductor

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8 Fairchild Semiconductor Corporation
o
FDD8874 / FDU8874 Rev. B
2
FDD8874 / FDU8874
N-Channel PowerTrench® MOSFET
30V, 116A, 5.1m
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either
synchronous
or
conventional
switching
PWM
controllers. It has been optimized for low gate charge, low
rDS(ON) and fast switching speed.
Applications
• DC/DC converters
Features
•rDS(ON) = 5.1mΩ, VGS = 10V, ID = 35A
•rDS(ON) = 6.4mΩ, VGS = 4.5V, ID = 35A
• High performance trench technology for extremely low
rDS(ON)
• Low gate charge
• High power and current handling capability
MOSFET Maximum Ratings T
C = 25°C unless otherwise noted
Thermal Characteristics
Symbol
Parameter
Ratings
Units
VDSS
Drain to Source Voltage
30
V
VGS
Gate to Source Voltage
±20
V
ID
Drain Current
116
A
Continuous (TC = 25
oC, V
GS = 10V) (Note 1)
Continuous (TC = 25
oC, V
GS = 4.5V) (Note 1)
103
A
Continuous (Tamb = 25
oC, V
GS = 10V, with R
θJA = 52
oC/W)
18
A
Pulsed
Figure 4
A
EAS
Single Pulse Avalanche Energy (Note 2)
240
mJ
PD
Power dissipation
110
W
Derate above 25oC0.73
W/oC
TJ, TSTG
Operating and Storage Temperature
-55 to 175
oC
RθJC
Thermal Resistance Junction to Case TO-252, TO-251
1.36
oC/W
RθJA
Thermal Resistance Junction to Ambient TO-252, TO-251
100
oC/W
RθJA
Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area
52
oC/W
D
G
S
G DS
I-PAK
(TO-251AA)
G
S
D
TO-252
D-PAK
(TO-252)
RoHS Compliant
tm
April
2008


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