STPS20L15D datasheet(2/5 Pages) STMICROELECTRONICS

Nome de Peças	STPS20L15D

Descrição Electrónicos	LOW DROP OR-ing POWER SCHOTTKY DIODE

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Symbol

Parameter

Value

Unit

Rth (j-c)

Junction to case

1.6

°C/W

THERMAL RESISTANCES

Symbol

Tests Conditions

Min.

Typ.

Max.

Unit

IR *

Reverse leakage

current

Tj = 25

°CVR = 15V

6

mA

Tj = 100

°CVR = 15V

200

500

VF *

Forward voltage drop

Tj = 25

°CIF = 19 A

0.41

V

Tj = 25

°CIF = 40 A

0.52

Tj = 125

°CIF = 19 A

0.28

0.33

Tj = 125

°CIF = 40 A

0.42

0.50

Pulse test :

* tp = 380

µs, δ < 2%

To evaluate the maximum conduction losses use the following equation :

P = 0.18 x IF(AV) + 8.10

-3 x IF2(RMS)

STATIC ELECTRICAL CHARACTERISTICS

0

2

4

6

8

1012

1416182022

0

1

2

3

4

5

6

7

8

PF(av)(W)

IF(av) (A)

δ = 1

δ = 0.5

δ = 0.2

δ = 0.1

δ = 0.05

T

δ=tp/T

tp

Fig. 1: Average forward power dissipation versus

average forward current.

0

25

50

75

100

125

0

2

4

6

8

10

12

14

16

18

20

22

IF(av)(A)

Tamb(°C)

Rth(j-a)=15°C/W

Rth(j-a)=Rth(j -c)

Rth(j-a)=35°C/W

T

δ=tp/T

tp

Fig. 2: Average forward current versus ambient

temperature (

δ = 1).

1E-3

1E-2

1E-1

1E+0

0

50

100

150

200

250

IM(A)

t(s)

IM

t

δ=0.5

Tc=50°C

Tc=75°C

Tc=110°C

Fig. 3: Non repetitive surge peak forward current

versus overload duration (maximum values).

1.0E-4

1.0E-3

1.0E-2

1.0E-1

1.0E+0

0.0

0.2

0.4

0.6

0.8

1.0

tp (s)

Zth(j-c)/Rth(j-c)

T

δ=tp/T

tp

Single pulse

δ = 0.5

δ = 0.2

δ = 0.1

Fig. 4: Relative variation of thermal impedance

junction to case versus pulse duration.

STPS20L15D/G

2/5

Nº de peça semelhante - STPS20L15D

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