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STP13NM50N Folha de dados(PDF) 4 Page - STMicroelectronics

Nome de Peças STP13NM50N
Descrição Electrónicos  N-channel 500 V - 0.250 廓 - 12 A MDmesh??II Power MOSFET TO-220 - TO-247 - TO-220FP - I2PAK - D2PAK
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP13NM50N Folha de dados(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STB13NM50N/-1 - STF13NM50N - STP13NM50N - STW13NM50N
4/18
2
Electrical characteristics
(TCASE= 25 °C unless otherwise specified)
Table 5.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 1 mA, VGS= 0
500
V
dv/dt(1)
1.
Characteristics value at turn off on inductive load
Drain-source voltage slope
VDD=400 V, ID=12 A,
VGS=10 V
30
V/ns
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS = Max rating,Tc=125°C
1
100
µA
µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±20 V
100
nA
VGS(th)
Gate threshold voltage
VDS= VGS, ID = 250 µA
23
4
V
RDS(on)
Static drain-source on
resistance
VGS= 10 V, ID= 6 A
0.25
0.32
Table 6.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
gfs
(1)
1.
Pulsed: pulse duration = 300µs, duty cycle 1.5%
Forward transconductance
VDS =15 V, ID= 6 A
8S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =50 V, f=1 MHz, VGS=0
960
50
5
pF
pF
pF
Coss eq.
(2)
2.
Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Equivalent output
capacitance
VGS=0, VDS =0 to 480 V
110
pF
Rg
Gate input resistance
f=1 MHz Gate DC Bias=0
test signal level=20 mV
open drain
5
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD=400 V, ID = 12 A
VGS =10 V
(see Figure 19)
30
5
15
nC
nC
nC


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