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STPS40L45CW Folha de dados(PDF) 2 Page - STMicroelectronics |
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STPS40L45CW Folha de dados(HTML) 2 Page - STMicroelectronics |
2 / 6 page STPS40L45CT/CW 2/6 Symbol Parameter Tests Conditions Min. Typ. Max. Unit IR * Reverse leakage cur- rent Tj = 25°C VR =VRRM 0.6 mA Tj = 125°C 140 280 mA VF * Forward voltage drop Tj=25 °CIF =20 A 0.53 V Tj = 125°C IF =20 A 0.42 0.49 Tj = 25°C IF =40 A 0.69 Tj = 125°C IF =40 A 0.6 0.7 Pulse test:*tp=380 µs, δ <2% To evaluate the conduction losses use the following equation : P=0.28xIF(AV) + 0.0105 IF 2 (RMS) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter Value Unit Rth (j-c) Junction to case Per diode Total 1.5 0.8 °C/W Rth(c) Coupling 0.1 °C/W THERMAL RESISTANCES 0 2 4 6 8 1012141618202224 0 2 4 6 8 10 12 14 16 IF(av) (A) PF(av)(W) T δ=tp/T tp δ = 0.05 δ = 0.1 δ = 0.2 δ = 0.5 δ = 1 Fig. 1: Average forward power dissipation versus average forward current (per diode). When the diodes 1 and 2 are used simultaneously : ∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) 0 25 50 75 100 125 150 0 2 4 6 8 10 12 14 16 18 20 22 Tamb(°C) IF(av)(A) Rth(j-a)=15°C/W Rth(j-a)=Rth(j-c) T δ=tp/T tp Fig. 2: Average forward current versus ambient temperature ( δ = 0.5, per diode) |
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