2SK1838L datasheet(2/8 Pages) RENESAS

Nome de Peças	2SK1838L

Descrição Electrónicos	Silicon N Channel MOS FET

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Fabricante Electrônico	RENESAS [Renesas Technology Corp]

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2SK1838(L), 2SK1838(S)

Rev.3.00 Nov 21, 2005 page 2 of 7

Absolute Maximum Ratings

(Ta = 25°C)

Item

Symbol

Ratings

Unit

Drain to source voltage

VDSS

250

V

Gate to source voltage

VGSS

±30

V

Drain current

ID

1

A

Drain peak current

ID(pulse)

*1

2

A

Body to drain diode reverse drain current

IDR

1

A

Channel dissipation

Pch

*2

10

W

Channel temperature

Tch

150

°C

Storage temperature

Tstg

–55 to +150

°C

Notes: 1. PW

≤ 10 µs, duty cycle ≤ 1 %

2. Value at Tc = 25

°C

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Drain to source breakdown voltage

V(BR)DSS

250

—

V

ID = 10 mA, VGS = 0

Gate to source breakdown voltage

V(BR)GSS

±30

—

V

IG =

±100 µA, VDS = 0

Gate to source leak current

IGSS

—

±10

µA

VGS =

±25 V, VDS = 0

Zero gate voltage drain current

IDSS

—

50

µA

VDS = 200 V, VGS = 0

Gate to source cutoff voltage

VGS(off)

2.0

—

3.0

V

VDS = 10 V, ID = 1 mA

Forward transfer admittance

|yfs|

0.3

0.5

—

S

VDS = 10 V, ID = 0.5 A *

3

Static drain to source on state

resistance

RDS(on)

—

5.5

8.0

Ω

ID = 0.5 A, VGS = 10 V *

3

Input capacitance

Ciss

—

60

—

pF

Output capacitance

Coss

—

30

—

pF

Reverse transfer capacitance

Crss

—

5

—

pF

VDS = 10 V, VGS = 0,

f = 1 MHz

Turn-on delay time

td(on)

—

5

—

ns

Rise time

tr

—

6

—

ns

Turn-off delay time

td(off)

—

10

—

ns

Fall time

tf

—

4.5

—

ns

VGS = 10 V, ID = 0.5 A,

RL = 60

Ω

Body to drain diode forward voltage

VDF

—

0.96

—

V

IF = 1 A, VGS = 0

Body to drain diode reverse recovery

time

trr

—

160

—

ns

IF = 1 A, VGS = 0,

diF/dt = 100 A/

µs

Note:

3. Pulse test

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